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Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof
The invention discloses a ceramic dielectric material for a high-dielectric low-loss high-voltage capacitor and a preparation method thereof. The material is prepared from a solid solution main material Ba(Ti<1-x-y>ZrNb)O<3>.mZnO, BaZrO3, a secondary additive and more than one rare earth oxides, and can be sintered within a temperature range of 1240-1320 DEG C to form the Y5V type high-dielectric-constant and low-dielectric-loss dielectric material with an excellent dielectric property and microstructure. The room-temperature dielectric constant of the material is 17000 or above, the capacitance-temperature change rate is +22%-82%, the room-temperature dielectric loss is less than 1.0%, and the alternating-current breakdown field strength is higher than 3.5 kv/mm. The material and the preparation method thereof provided by the invention are suitable for manufacturing multilayer ceramic capacitors with high capacity, high voltage resistance and high performance, and have wide industrial application prospects.
本发明公开了一种高介低损耗高压电容器用陶瓷介质材料及其制备方法。该材料由固溶体主料Ba(Ti1‑x‑yZrxNby)O3·mZnO，BaZrO3和二次添加剂和一种以上的稀土氧化物组成，可在1240～1320℃温度范围内烧结，形成具有优良的介电性能和显微结构的Y5V型高介电常数，低介电损耗介质材料。材料的室温介电常数在17000以上，容温变化率介于+22％～82％，室温介电损耗<1.0％，交流击穿场强高于3.5kv/mm。本发明提供的材料及其制备方法适用于制造大容量、高耐压、高性能的多层陶瓷电容器，具有广阔的工业化运用前景。
Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof
The invention discloses a ceramic dielectric material for a high-dielectric low-loss high-voltage capacitor and a preparation method thereof. The material is prepared from a solid solution main material Ba(Ti<1-x-y>ZrNb)O<3>.mZnO, BaZrO3, a secondary additive and more than one rare earth oxides, and can be sintered within a temperature range of 1240-1320 DEG C to form the Y5V type high-dielectric-constant and low-dielectric-loss dielectric material with an excellent dielectric property and microstructure. The room-temperature dielectric constant of the material is 17000 or above, the capacitance-temperature change rate is +22%-82%, the room-temperature dielectric loss is less than 1.0%, and the alternating-current breakdown field strength is higher than 3.5 kv/mm. The material and the preparation method thereof provided by the invention are suitable for manufacturing multilayer ceramic capacitors with high capacity, high voltage resistance and high performance, and have wide industrial application prospects.
本发明公开了一种高介低损耗高压电容器用陶瓷介质材料及其制备方法。该材料由固溶体主料Ba(Ti1‑x‑yZrxNby)O3·mZnO，BaZrO3和二次添加剂和一种以上的稀土氧化物组成，可在1240～1320℃温度范围内烧结，形成具有优良的介电性能和显微结构的Y5V型高介电常数，低介电损耗介质材料。材料的室温介电常数在17000以上，容温变化率介于+22％～82％，室温介电损耗<1.0％，交流击穿场强高于3.5kv/mm。本发明提供的材料及其制备方法适用于制造大容量、高耐压、高性能的多层陶瓷电容器，具有广阔的工业化运用前景。
Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof
高介低损耗耐高压电容器用陶瓷介质材料及其制备方法
ZHAN XINXING (Autor:in)
20.11.2020
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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