Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Arsenic telluride target material and preparation method thereof
The invention provides an arsenic telluride target material and a preparation method thereof. The preparation method of the arsenic telluride target material comprises the following steps of: S1, mixing tellurium powder and arsenic powder to obtain mixed powder; S2, carrying out two-stage heating on the mixed powder in a nitrogen or inert gas atmosphere, and cooling to obtain arsenic tritelluride;and S3, crushing and screening the arsenic tritelluride, and carrying out vacuum hot-pressing sintering on the obtained arsenic tritelluride powder to obtain the arsenic telluride target material. The two-stage heating comprises a first stage and a second stage. In the first stage, the mixed powder is heated to 200-300 DEG C at a heating rate of 5-10 DEG C/min, and the temperature is kept for 20-40 minutes. In the second stage, the mixed powder is heated to to 350-450 DEG C at a heating rate of 5-10 DEG C/min, and the temperature is kept for 20-40 minutes. The temperature of vacuum hot-pressing sintering is 300-380 DEG C, and the pressure is 35-50 MPa. According to the preparation method disclosed by the invention, on the premise of ensuring the purity and density of the product, the lossof materials and the requirement on a mold can be reduced by using relatively low temperature and pressure.
本公开提供一种碲化砷靶材及其制备方法。所述碲化砷靶材的制备方法包括以下步骤：步骤S1，混合碲粉和砷粉，得到混合粉末；步骤S2，将混合粉末在氮气或惰性气体氛围中进行两段式加热，冷却，制得三碲化二砷；步骤S3，将三碲化二砷进行破碎筛分，得到的三碲化二砷粉末经真空热压烧结，制得碲化砷靶材；其中，两段式加热包括：第一阶段，将混合粉末以5‑10℃/min的升温速率加热至200‑300℃，保温20‑40min；以及第二阶段，以5‑10℃/min升温速率加热至350‑450℃，保温20‑40min；真空热压烧结的温度为300‑380℃，压力为35‑50MPa。本申请的制备方法能够在保证产品纯度和密度的前提下，使用较低的温度与压力，降低物料的损失与对模具的要求。
Arsenic telluride target material and preparation method thereof
The invention provides an arsenic telluride target material and a preparation method thereof. The preparation method of the arsenic telluride target material comprises the following steps of: S1, mixing tellurium powder and arsenic powder to obtain mixed powder; S2, carrying out two-stage heating on the mixed powder in a nitrogen or inert gas atmosphere, and cooling to obtain arsenic tritelluride;and S3, crushing and screening the arsenic tritelluride, and carrying out vacuum hot-pressing sintering on the obtained arsenic tritelluride powder to obtain the arsenic telluride target material. The two-stage heating comprises a first stage and a second stage. In the first stage, the mixed powder is heated to 200-300 DEG C at a heating rate of 5-10 DEG C/min, and the temperature is kept for 20-40 minutes. In the second stage, the mixed powder is heated to to 350-450 DEG C at a heating rate of 5-10 DEG C/min, and the temperature is kept for 20-40 minutes. The temperature of vacuum hot-pressing sintering is 300-380 DEG C, and the pressure is 35-50 MPa. According to the preparation method disclosed by the invention, on the premise of ensuring the purity and density of the product, the lossof materials and the requirement on a mold can be reduced by using relatively low temperature and pressure.
本公开提供一种碲化砷靶材及其制备方法。所述碲化砷靶材的制备方法包括以下步骤：步骤S1，混合碲粉和砷粉，得到混合粉末；步骤S2，将混合粉末在氮气或惰性气体氛围中进行两段式加热，冷却，制得三碲化二砷；步骤S3，将三碲化二砷进行破碎筛分，得到的三碲化二砷粉末经真空热压烧结，制得碲化砷靶材；其中，两段式加热包括：第一阶段，将混合粉末以5‑10℃/min的升温速率加热至200‑300℃，保温20‑40min；以及第二阶段，以5‑10℃/min升温速率加热至350‑450℃，保温20‑40min；真空热压烧结的温度为300‑380℃，压力为35‑50MPa。本申请的制备方法能够在保证产品纯度和密度的前提下，使用较低的温度与压力，降低物料的损失与对模具的要求。
Arsenic telluride target material and preparation method thereof
碲化砷靶材及其制备方法
WANG PENGFEI (Autor:in) / ZENG CHENGLIANG (Autor:in) / WU CAIHONG (Autor:in) / WEN CHONGBIN (Autor:in)
25.12.2020
Patent
Elektronische Ressource
Chinesisch
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