Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
The invention discloses a high-thermal-conductivity silicon nitride ceramic substrate and a preparation method thereof, and belongs to the technical field of ceramic substrate materials. The method comprises the following steps: carrying out primary ball milling and mixing on silicon nitride powder, a sintering aid, carbon black, triethyl phosphate and a solvent; adding a binder and a plasticizer,and carrying out secondary ball milling to obtain a slurry; carrying out vacuum defoaming treatment, and then carrying out tape casting to obtain a flaky biscuit; and performing high-temperature sintering after vacuum glue discharging to obtain the silicon nitride ceramic substrate. According to the invention, the carbon black is introduced based on the raw material ratio, and the sintering is carried out by two-step heating, so that the carbon black and the oxygen impurities of the silicon nitride are fully subjected to chemical reaction at a proper temperature and under a proper atmospherecondition, the lattice oxygen content of the silicon nitride ceramic is effectively reduced, and the thermal conductivity of the silicon nitride ceramic is improved. The silicon nitride ceramic substrate prepared by the invention has good performances of high thermal conductivity and high bending strength.
本发明公开了一种高导热氮化硅陶瓷基板及其制备方法，属于陶瓷基板材料技术领域。该方法包括将氮化硅粉、烧结助剂、炭黑、磷酸三乙酯和溶剂，一次球磨混合；加入粘结剂和增塑剂后二次球磨，得到浆料；真空脱泡处理后用流延成型制得薄片状素坯；真空排胶后进行高温烧结，得到氮化硅陶瓷基板。本发明通过在原料配比中引入炭黑，并且烧结分两步加热进行，使炭黑和氮化硅的氧杂质在合适的温度和气氛条件下充分地发生化学反应，有效地降低氮化硅陶瓷的晶格氧含量，从而提高其热导率。本发明所制备的氮化硅陶瓷基板具有高热导率和高抗弯强度的良好性能。
High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
The invention discloses a high-thermal-conductivity silicon nitride ceramic substrate and a preparation method thereof, and belongs to the technical field of ceramic substrate materials. The method comprises the following steps: carrying out primary ball milling and mixing on silicon nitride powder, a sintering aid, carbon black, triethyl phosphate and a solvent; adding a binder and a plasticizer,and carrying out secondary ball milling to obtain a slurry; carrying out vacuum defoaming treatment, and then carrying out tape casting to obtain a flaky biscuit; and performing high-temperature sintering after vacuum glue discharging to obtain the silicon nitride ceramic substrate. According to the invention, the carbon black is introduced based on the raw material ratio, and the sintering is carried out by two-step heating, so that the carbon black and the oxygen impurities of the silicon nitride are fully subjected to chemical reaction at a proper temperature and under a proper atmospherecondition, the lattice oxygen content of the silicon nitride ceramic is effectively reduced, and the thermal conductivity of the silicon nitride ceramic is improved. The silicon nitride ceramic substrate prepared by the invention has good performances of high thermal conductivity and high bending strength.
本发明公开了一种高导热氮化硅陶瓷基板及其制备方法，属于陶瓷基板材料技术领域。该方法包括将氮化硅粉、烧结助剂、炭黑、磷酸三乙酯和溶剂，一次球磨混合；加入粘结剂和增塑剂后二次球磨，得到浆料；真空脱泡处理后用流延成型制得薄片状素坯；真空排胶后进行高温烧结，得到氮化硅陶瓷基板。本发明通过在原料配比中引入炭黑，并且烧结分两步加热进行，使炭黑和氮化硅的氧杂质在合适的温度和气氛条件下充分地发生化学反应，有效地降低氮化硅陶瓷的晶格氧含量，从而提高其热导率。本发明所制备的氮化硅陶瓷基板具有高热导率和高抗弯强度的良好性能。
High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof
高导热氮化硅陶瓷基板及其制备方法
CHEN YINGHAO (Autor:in)
01.01.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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