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High-thermal-conductivity silicon nitride substrate and preparation method thereof
The invention belongs to the technical field of ceramic substrate manufacturing, and particularly relates to a high-thermal-conductivity silicon nitride substrate and a preparation method thereof. The substrate is prepared from silicon nitride green ceramic chips subjected to tape casting through a glue discharging process and a sintering process in sequence, and the percentage of oxygen atoms in the substrate is 0-0.01%. The carbon atom percentage in the glue discharging process is accurately controlled through the glue discharging process change, the phase transformation and oxygen atom percentage composition are accurately controlled through the pressure change in the sintering process, and then preparation of the high-thermal-conductivity and high-strength silicon nitride substrate is achieved.
本发明属于陶瓷基板制造技术领域，尤其是一种高导热氮化硅基板及其制备方法。本发明基板由流延后的氮化硅生瓷片依次经过排胶工艺和烧结工艺制得，基板中的氧原子百分比为0～0.01％。通过排胶工艺变化精确控制排胶过程中的碳原子百分比，通过烧结过程中的压力变化精确控制相转变、氧原子百分比组成，进而实现高导热高强度氮化硅基板的制备。
High-thermal-conductivity silicon nitride substrate and preparation method thereof
The invention belongs to the technical field of ceramic substrate manufacturing, and particularly relates to a high-thermal-conductivity silicon nitride substrate and a preparation method thereof. The substrate is prepared from silicon nitride green ceramic chips subjected to tape casting through a glue discharging process and a sintering process in sequence, and the percentage of oxygen atoms in the substrate is 0-0.01%. The carbon atom percentage in the glue discharging process is accurately controlled through the glue discharging process change, the phase transformation and oxygen atom percentage composition are accurately controlled through the pressure change in the sintering process, and then preparation of the high-thermal-conductivity and high-strength silicon nitride substrate is achieved.
本发明属于陶瓷基板制造技术领域，尤其是一种高导热氮化硅基板及其制备方法。本发明基板由流延后的氮化硅生瓷片依次经过排胶工艺和烧结工艺制得，基板中的氧原子百分比为0～0.01％。通过排胶工艺变化精确控制排胶过程中的碳原子百分比，通过烧结过程中的压力变化精确控制相转变、氧原子百分比组成，进而实现高导热高强度氮化硅基板的制备。
High-thermal-conductivity silicon nitride substrate and preparation method thereof
一种高导热氮化硅基板及其制备方法
ZHOU ZEAN (Autor:in) / HU ZHUSONG (Autor:in) / XU HAIXIAN (Autor:in) / ZHANG BO (Autor:in) / ZHU JIAXU (Autor:in) / ZHANG ZHENWEN (Autor:in) / ZHANG YANG (Autor:in) / ZHANG HAO (Autor:in)
07.03.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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