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Nickel oxide-based ceramic target material, film and film preparation process
The invention relates to a ceramic target material, a film and a film preparation process. The ceramic target material comprises nickel oxide and a doping source element. The total mass fraction of the doping source element is not higher than 10%, the doping source element is selected from one or more of 0-6% of Li, 0-0.3% of Na, 0-1.0% of Mg, 0-0.1% of Al, 0-0.1% of Si, 0-0.15% of K, 0-12% of Zn, 0-1.5% of Zr, 0-1.2% of Mn, 0-10% of Cu, 0-1.2% of Cr, 0-0.3% of V, 0-10% of W and 0-2.5% of Ti, the average grain size of the ceramic target material is 1-10 [mu]m, the doped phase size is 0-800nm, and the density is greater than 98%. The prepared target material is better in electrical conductivity and coating process performance; and the prepared film is good in conductivity and relatively high in transmissivity.
本发明涉及一种陶瓷靶材材料、薄膜及薄膜制备工艺，包括氧化镍和掺杂源元素，所述掺杂源元素的总质量分数不高于10％，所述掺杂源元素选自Li 0‑6％、Na 0‑0.3％、Mg 0‑1.0％、Al 0‑0.1％、Si 0‑0.1％、K 0‑0.15％、Zn 0‑12％、Zr 0‑1.5％、Mn 0‑1.2％、Cu 0‑10％、Cr0‑1.2％、V 0‑0.3％、W 0‑10％、Ti 0‑2.5％中的一种或几种；其中陶瓷靶材材料的平均晶粒尺寸1‑10μm，掺杂相尺寸0‑800nm，致密度大于98％。制备得到的靶材材料的导电性、镀膜工艺性能更好；制备得到的薄膜导电性良好且具有较大透射率。
Nickel oxide-based ceramic target material, film and film preparation process
The invention relates to a ceramic target material, a film and a film preparation process. The ceramic target material comprises nickel oxide and a doping source element. The total mass fraction of the doping source element is not higher than 10%, the doping source element is selected from one or more of 0-6% of Li, 0-0.3% of Na, 0-1.0% of Mg, 0-0.1% of Al, 0-0.1% of Si, 0-0.15% of K, 0-12% of Zn, 0-1.5% of Zr, 0-1.2% of Mn, 0-10% of Cu, 0-1.2% of Cr, 0-0.3% of V, 0-10% of W and 0-2.5% of Ti, the average grain size of the ceramic target material is 1-10 [mu]m, the doped phase size is 0-800nm, and the density is greater than 98%. The prepared target material is better in electrical conductivity and coating process performance; and the prepared film is good in conductivity and relatively high in transmissivity.
本发明涉及一种陶瓷靶材材料、薄膜及薄膜制备工艺，包括氧化镍和掺杂源元素，所述掺杂源元素的总质量分数不高于10％，所述掺杂源元素选自Li 0‑6％、Na 0‑0.3％、Mg 0‑1.0％、Al 0‑0.1％、Si 0‑0.1％、K 0‑0.15％、Zn 0‑12％、Zr 0‑1.5％、Mn 0‑1.2％、Cu 0‑10％、Cr0‑1.2％、V 0‑0.3％、W 0‑10％、Ti 0‑2.5％中的一种或几种；其中陶瓷靶材材料的平均晶粒尺寸1‑10μm，掺杂相尺寸0‑800nm，致密度大于98％。制备得到的靶材材料的导电性、镀膜工艺性能更好；制备得到的薄膜导电性良好且具有较大透射率。
Nickel oxide-based ceramic target material, film and film preparation process
一种氧化镍基陶瓷靶材、薄膜及薄膜制备工艺
ZHANG HU (Autor:in) / GAO MING (Autor:in) / YANG BENRUN (Autor:in) / ZHOU LILI (Autor:in)
09.04.2021
Patent
Elektronische Ressource
Chinesisch
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