Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation process of large-size pressureless sintered silicon carbide ceramic material
The invention discloses a preparation process of a large-size pressureless sintered silicon carbide ceramic material, and belongs to the technical field of ceramics. The method comprises the following steps of: S1, selecting silicon carbide powder for later use, S2, stirring, mixing, granulating and drying the selected silicon carbide powder, S3, isostatically pressing the silicon carbide powder to form ceramic, S4, sintering the pressed and formed ceramic to obtain the pressureless sintered silicon carbide ceramic. According to the invention, the traditional sintering process is broken through, the 99.9% silicon carbide micro powder is sintered at a high temperature of 22000 DEG C under a non-pressure condition and in an argon atmosphere, the density reaches 3.15 g/cm < 3 >, the thermal conductivity is good, the thermal conductivity reaches 74 W/m.k, the Knoop hardness is 2600 kg/mm < 2 >, and the sintered non-pressure silicon carbide material has super-strong fracture toughness, relatively high fracture strength, zero porosity, density of 3.15 g/cm < 2 >, better wear resistance and corrosion resistance, and the highest working temperature of 16100 DEG C.
本发明公开了一种大尺寸无压烧结碳化硅陶瓷材料制备工艺，属于陶瓷技术领域，包括以下步骤：S1、选取碳化硅粉备用，S2、将选取的碳化硅粉搅拌混料、造粒烘干，S3、将碳化硅粉等静压制成型陶瓷，S4、对压制成型的陶瓷进行烧结，获得无压烧结碳化硅陶瓷。本发明，突破了传统烧结工艺，在无压条件下进行烧结，氩气氛烧结中，将99.9%的碳化硅微粉在22000C高温烧结，密度达到3.15g/cm3，热导性能好，热导率达74W/m.k，努氏硬度2600kg/mm2，烧结后的无压碳化硅材料具有超强的断裂韧性，又具有较高的断裂强度，0气孔率，密度3.15g/cm2，耐磨耐腐蚀性能更好，最高工作温度16100C。
Preparation process of large-size pressureless sintered silicon carbide ceramic material
The invention discloses a preparation process of a large-size pressureless sintered silicon carbide ceramic material, and belongs to the technical field of ceramics. The method comprises the following steps of: S1, selecting silicon carbide powder for later use, S2, stirring, mixing, granulating and drying the selected silicon carbide powder, S3, isostatically pressing the silicon carbide powder to form ceramic, S4, sintering the pressed and formed ceramic to obtain the pressureless sintered silicon carbide ceramic. According to the invention, the traditional sintering process is broken through, the 99.9% silicon carbide micro powder is sintered at a high temperature of 22000 DEG C under a non-pressure condition and in an argon atmosphere, the density reaches 3.15 g/cm < 3 >, the thermal conductivity is good, the thermal conductivity reaches 74 W/m.k, the Knoop hardness is 2600 kg/mm < 2 >, and the sintered non-pressure silicon carbide material has super-strong fracture toughness, relatively high fracture strength, zero porosity, density of 3.15 g/cm < 2 >, better wear resistance and corrosion resistance, and the highest working temperature of 16100 DEG C.
本发明公开了一种大尺寸无压烧结碳化硅陶瓷材料制备工艺，属于陶瓷技术领域，包括以下步骤：S1、选取碳化硅粉备用，S2、将选取的碳化硅粉搅拌混料、造粒烘干，S3、将碳化硅粉等静压制成型陶瓷，S4、对压制成型的陶瓷进行烧结，获得无压烧结碳化硅陶瓷。本发明，突破了传统烧结工艺，在无压条件下进行烧结，氩气氛烧结中，将99.9%的碳化硅微粉在22000C高温烧结，密度达到3.15g/cm3，热导性能好，热导率达74W/m.k，努氏硬度2600kg/mm2，烧结后的无压碳化硅材料具有超强的断裂韧性，又具有较高的断裂强度，0气孔率，密度3.15g/cm2，耐磨耐腐蚀性能更好，最高工作温度16100C。
Preparation process of large-size pressureless sintered silicon carbide ceramic material
一种大尺寸无压烧结碳化硅陶瓷材料制备工艺
LI MAOQIANG (Autor:in) / WANG DAWEI (Autor:in) / LI XUECHAO (Autor:in) / YANG JINGLEI (Autor:in) / HOU TAO (Autor:in)
16.07.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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