Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-purity aluminum oxide ceramic substrate and preparation process thereof
The invention discloses a high-purity aluminum oxide ceramic substrate and a preparation process thereof. The ceramic substrate adopts specially purified superfine alpha-aluminum oxide powder as a main phase material, magnesium aluminate spinel powder as a fluxing agent and lanthanum oxide and yttrium oxide as additives; the requirements of the alumina powder are as follows: the purity of Al2O3 is greater than or equal to 99.9%, the content of SiO2 is less than 0.05%, the content of Fe2O3 is less than 0.02%, and the content of Na2O is less than 0.02%; the conversion rate of alpha-Al2O3 is greater than or equal to 96%; and the conductivity is less than 100s/cm. and 2, the volume density of the ceramic substrate prepared by the preparation process of the high-purity aluminum oxide ceramic substrate is greater than or equal to 3.92 g/cm < 3 >, the volume resistivity is greater than or equal to 10145 omega.cm, the heat conductivity is greater than 2930W/(m.K), the dielectric constant is 9-10 (1MHz, 25 DEG C), and the bending strength is greater than or equal to 450MPa. The preparation process adopts a tape casting process and a normal-pressure sintering method.
本发明公开了一种高纯氧化铝陶瓷基板及其制备工艺，所述陶瓷基板采用经特别提纯的超细α‑氧化铝粉为主相材料，镁铝尖晶石粉体为助熔剂，氧化镧及氧化钇为添加剂；氧化铝粉的要求：Al2O3的纯度≥99.9%，SiO2的含量＜0.05%，Fe2O3的含量＜0.02%，Na2O的含量＜0.02%；ɑ‑Al2O3的转化率≥96%；电导率＜100µs/cm。2.本发明之高纯氧化铝陶瓷基板制备工艺所制备的陶瓷基板，体积密度≥3.92g/cm3，体积电阻率≧10145Ω·cm，热导率＞2930W/（m·K），介电常数9~10（1MHz，25℃），抗弯强度≥450MPa。所述制备工艺采用流延成型工艺和常压烧结方法。
High-purity aluminum oxide ceramic substrate and preparation process thereof
The invention discloses a high-purity aluminum oxide ceramic substrate and a preparation process thereof. The ceramic substrate adopts specially purified superfine alpha-aluminum oxide powder as a main phase material, magnesium aluminate spinel powder as a fluxing agent and lanthanum oxide and yttrium oxide as additives; the requirements of the alumina powder are as follows: the purity of Al2O3 is greater than or equal to 99.9%, the content of SiO2 is less than 0.05%, the content of Fe2O3 is less than 0.02%, and the content of Na2O is less than 0.02%; the conversion rate of alpha-Al2O3 is greater than or equal to 96%; and the conductivity is less than 100s/cm. and 2, the volume density of the ceramic substrate prepared by the preparation process of the high-purity aluminum oxide ceramic substrate is greater than or equal to 3.92 g/cm < 3 >, the volume resistivity is greater than or equal to 10145 omega.cm, the heat conductivity is greater than 2930W/(m.K), the dielectric constant is 9-10 (1MHz, 25 DEG C), and the bending strength is greater than or equal to 450MPa. The preparation process adopts a tape casting process and a normal-pressure sintering method.
本发明公开了一种高纯氧化铝陶瓷基板及其制备工艺，所述陶瓷基板采用经特别提纯的超细α‑氧化铝粉为主相材料，镁铝尖晶石粉体为助熔剂，氧化镧及氧化钇为添加剂；氧化铝粉的要求：Al2O3的纯度≥99.9%，SiO2的含量＜0.05%，Fe2O3的含量＜0.02%，Na2O的含量＜0.02%；ɑ‑Al2O3的转化率≥96%；电导率＜100µs/cm。2.本发明之高纯氧化铝陶瓷基板制备工艺所制备的陶瓷基板，体积密度≥3.92g/cm3，体积电阻率≧10145Ω·cm，热导率＞2930W/（m·K），介电常数9~10（1MHz，25℃），抗弯强度≥450MPa。所述制备工艺采用流延成型工艺和常压烧结方法。
High-purity aluminum oxide ceramic substrate and preparation process thereof
一种高纯氧化铝陶瓷基板及其制备工艺
WU CHONGJUN (Autor:in) / DUAN MINGXIN (Autor:in) / DING ZHIJING (Autor:in) / KONG LIPING (Autor:in) / NIU XIAOYANG (Autor:in) / ZHANG XIAONA (Autor:in)
06.08.2021
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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