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SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Provided are a sputtering target in which the occurrence of particles can be reduced, and which has improved uniformity, and a method for manufacturing the sputtering target. The sputtering target is characterized by including 10 mol% to 85 mol% Co, 0 mol% to 47 mol% Pt, and 0 mol% to 47 mol% Cr as metal components, and by including at least B6O as an oxide component.
本发明提供一种能减少颗粒的产生的、更均质的溅射靶及其制造方法。一种溅射靶,其特征在于,包含10mol%以上且85mol%以下的Co、0mol%以上且47mol%以下的Pt、0mol%以上且47mol%以下的Cr作为金属成分,至少包含B6O作为氧化物成分。
SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
Provided are a sputtering target in which the occurrence of particles can be reduced, and which has improved uniformity, and a method for manufacturing the sputtering target. The sputtering target is characterized by including 10 mol% to 85 mol% Co, 0 mol% to 47 mol% Pt, and 0 mol% to 47 mol% Cr as metal components, and by including at least B6O as an oxide component.
本发明提供一种能减少颗粒的产生的、更均质的溅射靶及其制造方法。一种溅射靶,其特征在于,包含10mol%以上且85mol%以下的Co、0mol%以上且47mol%以下的Pt、0mol%以上且47mol%以下的Cr作为金属成分,至少包含B6O作为氧化物成分。
SPUTTERING TARGET AND METHOD FOR MANUFACTURING SPUTTERING TARGET
溅射靶以及溅射靶的制造方法
FURUYA YUKI (Autor:in)
23.11.2021
Patent
Elektronische Ressource
Chinesisch
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