Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Oxide sputtering target
One embodiment of the oxide sputtering target is an oxide composed of a metal component and oxygen, and when the total content of the metal component is taken as 100% by mass, the content of the metal component is less than or equal to 100% by mass. The present invention is characterized by containing Al in an amount within the range of from 0.3 mass% to 3.7 mass% (inclusive), Si in an amount within the range of from 6.0 mass% to 14.5 mass% (inclusive), and an element M comprising one or more elements selected from the group consisting of Zr, Hf and Y in a total amount within the range of from 0.003 mass% to 0.1 mass% (inclusive), with the remainder comprising Zn and unavoidable impurities.
该氧化物溅射靶的一方式为由金属成分和氧构成的氧化物，关于金属成分，将金属成分的合计含量设为100质量％时，含有0.3质量％以上且3.7质量％以下的范围内的量的Al、6.0质量％以上且14.5质量％以下的范围内的量的Si、以及合计量在0.003质量％以上且0.1质量％以下的范围内的由选自Zr、Hf和Y中的一种或两种以上构成的M元素，剩余部分由Zn及不可避免的杂质构成。
Oxide sputtering target
One embodiment of the oxide sputtering target is an oxide composed of a metal component and oxygen, and when the total content of the metal component is taken as 100% by mass, the content of the metal component is less than or equal to 100% by mass. The present invention is characterized by containing Al in an amount within the range of from 0.3 mass% to 3.7 mass% (inclusive), Si in an amount within the range of from 6.0 mass% to 14.5 mass% (inclusive), and an element M comprising one or more elements selected from the group consisting of Zr, Hf and Y in a total amount within the range of from 0.003 mass% to 0.1 mass% (inclusive), with the remainder comprising Zn and unavoidable impurities.
该氧化物溅射靶的一方式为由金属成分和氧构成的氧化物，关于金属成分，将金属成分的合计含量设为100质量％时，含有0.3质量％以上且3.7质量％以下的范围内的量的Al、6.0质量％以上且14.5质量％以下的范围内的量的Si、以及合计量在0.003质量％以上且0.1质量％以下的范围内的由选自Zr、Hf和Y中的一种或两种以上构成的M元素，剩余部分由Zn及不可避免的杂质构成。
Oxide sputtering target
氧化物溅射靶
YAMAGUCHI TAKESHI (Autor:in) / KIUCHI KAHO (Autor:in) / MUTSUDA YUYA (Autor:in)
01.03.2022
Patent
Elektronische Ressource
Chinesisch
OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD
| Europäisches Patentamt | 2021
OXIDE SPUTTERING TARGET AND OXIDE SPUTTERING TARGET PRODUCTION METHOD
| Europäisches Patentamt | 2021