Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-density indium tungsten oxide target material and preparation method thereof
The invention belongs to the technical field of target material preparation, and discloses a preparation method of a high-density indium tungsten oxide target material, which comprises the following steps: mixing indium oxide powder and tungsten oxide powder to obtain powder I, carrying out high-temperature calcination, ball milling and spray granulation on the powder I to obtain powder II, and then carrying out hydraulic forming and cold isostatic pressing on the powder II to obtain an indium tungsten oxide target blank, thereby obtaining the high-density indium tungsten oxide target material. The mass ratio of indium oxide to tungsten oxide is (95-99.9): (0.1-5), and D90 obtained after the powder is subjected to high-temperature calcination and ball milling is 1 +/-0.2 [mu] m. By means of the design, the high-density indium tungsten oxide target with high relative density and low resistance is prepared, and in addition, the high-density indium tungsten oxide target with high relative density and low resistance is obtained. The invention further discloses the high-density indium tungsten oxide target material.
本申请属于靶材制备技术领域，公开了一种高致密度氧化铟钨靶材的制备方法，先将氧化铟粉末、氧化钨粉末混合，得到粉体一，再将粉体一高温煅烧、球磨、喷雾造粒，得到粉体二，随后将粉体二液压成型，冷等静压，得到氧化铟钨靶坯，最后将氧化铟钨靶坯烧结，得到氧化铟钨靶材，且氧化铟与氧化钨的质量比为95～99.9：0.1～5，粉体一经高温煅烧、球磨后的D90为1±0.2μm，本申请通过上述设计，制得了一种具有高的相对密度、低电阻的高致密度氧化铟钨靶材，此外，本申请还公开了一种高致密度氧化铟钨靶材。
High-density indium tungsten oxide target material and preparation method thereof
The invention belongs to the technical field of target material preparation, and discloses a preparation method of a high-density indium tungsten oxide target material, which comprises the following steps: mixing indium oxide powder and tungsten oxide powder to obtain powder I, carrying out high-temperature calcination, ball milling and spray granulation on the powder I to obtain powder II, and then carrying out hydraulic forming and cold isostatic pressing on the powder II to obtain an indium tungsten oxide target blank, thereby obtaining the high-density indium tungsten oxide target material. The mass ratio of indium oxide to tungsten oxide is (95-99.9): (0.1-5), and D90 obtained after the powder is subjected to high-temperature calcination and ball milling is 1 +/-0.2 [mu] m. By means of the design, the high-density indium tungsten oxide target with high relative density and low resistance is prepared, and in addition, the high-density indium tungsten oxide target with high relative density and low resistance is obtained. The invention further discloses the high-density indium tungsten oxide target material.
本申请属于靶材制备技术领域，公开了一种高致密度氧化铟钨靶材的制备方法，先将氧化铟粉末、氧化钨粉末混合，得到粉体一，再将粉体一高温煅烧、球磨、喷雾造粒，得到粉体二，随后将粉体二液压成型，冷等静压，得到氧化铟钨靶坯，最后将氧化铟钨靶坯烧结，得到氧化铟钨靶材，且氧化铟与氧化钨的质量比为95～99.9：0.1～5，粉体一经高温煅烧、球磨后的D90为1±0.2μm，本申请通过上述设计，制得了一种具有高的相对密度、低电阻的高致密度氧化铟钨靶材，此外，本申请还公开了一种高致密度氧化铟钨靶材。
High-density indium tungsten oxide target material and preparation method thereof
一种高致密度氧化铟钨靶材及其制备方法
LI KAIJIE (Autor:in) / WANG QIFENG (Autor:in) / LUO SISHI (Autor:in) / GU DESHENG (Autor:in) / ZHANG XINGYU (Autor:in)
10.09.2024
Patent
Elektronische Ressource
Chinesisch
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