Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Bonded body, ceramic copper circuit board, and semiconductor device
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer disposed on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate. The bonding layer contains titanium. The bonding layer has a first region and a second region located between the first region and the copper plate, the first region includes a layer having titanium as a main component, and the layer is formed at an interface between the bonding layer and the ceramic substrate. When the Ti concentration in a 200 [mu] m * thickness range of each of the first region and the second region is measured by EDX, the ratio M1/M2 of the titanium concentration M1at% in the first region to the titanium concentration M2at% in the second region of the bonded body is 0.1-5.
实施方式的接合体具备：陶瓷基板、铜板、以及配置于上述陶瓷基板的至少一面且将上述陶瓷基板与上述铜板接合的接合层。上述接合层含有钛。上述接合层具有第一区域、和位于上述第一区域与上述铜板之间的第二区域，上述第一区域包含以钛作为主成分的层，上述层形成于上述接合层与上述陶瓷基板的界面。通过EDX测定上述第一区域及上述第二区域各自的测定区域的200μm×厚度的范围中的Ti浓度时，上述接合体的上述第一区域的钛浓度M1at％与上述第二区域的钛浓度M2at％之比M1/M2为0.1～5。
Bonded body, ceramic copper circuit board, and semiconductor device
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer disposed on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate. The bonding layer contains titanium. The bonding layer has a first region and a second region located between the first region and the copper plate, the first region includes a layer having titanium as a main component, and the layer is formed at an interface between the bonding layer and the ceramic substrate. When the Ti concentration in a 200 [mu] m * thickness range of each of the first region and the second region is measured by EDX, the ratio M1/M2 of the titanium concentration M1at% in the first region to the titanium concentration M2at% in the second region of the bonded body is 0.1-5.
实施方式的接合体具备：陶瓷基板、铜板、以及配置于上述陶瓷基板的至少一面且将上述陶瓷基板与上述铜板接合的接合层。上述接合层含有钛。上述接合层具有第一区域、和位于上述第一区域与上述铜板之间的第二区域，上述第一区域包含以钛作为主成分的层，上述层形成于上述接合层与上述陶瓷基板的界面。通过EDX测定上述第一区域及上述第二区域各自的测定区域的200μm×厚度的范围中的Ti浓度时，上述接合体的上述第一区域的钛浓度M1at％与上述第二区域的钛浓度M2at％之比M1/M2为0.1～5。
Bonded body, ceramic copper circuit board, and semiconductor device
接合体、陶瓷铜电路基板、及半导体装置
YONETSU MAKI (Autor:in) / SUENAGA SEIICHI (Autor:in) / FUJISAWA SACHIKO (Autor:in) / SANO TAKASHI (Autor:in)
31.01.2023
Patent
Elektronische Ressource
Chinesisch
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