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BONDED BODY, CERAMIC-COPPER CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.
BONDED BODY, CERAMIC-COPPER CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer. The bonding layer is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes Ag and Ti. The copper plate includes a first region, a second region, and a third region. The first region is separated from the bonding layer in a thickness direction. The second region is located between the bonding layer and the first region and has a higher Ag concentration than the first region. The third region is located between the bonding layer and the second region and has a lower Ag concentration than the second region.
BONDED BODY, CERAMIC-COPPER CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
YONETSU MAKI (Autor:in) / SUENAGA SEIICHI (Autor:in) / FUJISAWA SACHIKO (Autor:in) / SANO TAKASHI (Autor:in)
17.08.2023
Patent
Elektronische Ressource
Englisch
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