Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of tantalum oxide target material
The invention belongs to the technical field of sputtering target materials, and particularly relates to a tantalum oxide target material and a preparation method thereof. The preparation process of the method comprises the following steps: S1, providing tantalum oxide powder; s2, carrying out compression molding on the tantalum oxide powder by adopting a cold isostatic pressing method; s3, carrying out two-step sintering molding on the pressed blank in an oxygen atmosphere; s4, after the target material is sintered, machining treatment is carried out; the tantalum oxide sputtering target material with high density and uniform grain size is obtained through the method, meanwhile, the large-specification sputtering target material is easier to prepare through the method, the limitation of hot pressing or hot isostatic pressing equipment on the size of the sputtering target material is completely overcome, and the actual application of preparing a tantalum oxide film layer through magnetron sputtering is better met.
本发明属溅射靶材技术领域，具体涉及一种氧化钽靶材及其制备方法。该方法制备过程包括步骤S1提供氧化钽粉体；S2将氧化钽粉体采用冷等静压方法压制成型；S3将压制坯在氧气气氛中进行两步烧结成型；S4靶材烧结完成后进行机械加工处理；通过该发明得到高致密度、晶粒尺寸均匀的氧化钽溅射靶材，同时该方法更容易制备大规格的溅射靶材，完全克服热压或热等静压设备对溅射靶材尺寸的限制，更有利于满足磁控溅射制备氧化钽膜层的实际应用。
Preparation method of tantalum oxide target material
The invention belongs to the technical field of sputtering target materials, and particularly relates to a tantalum oxide target material and a preparation method thereof. The preparation process of the method comprises the following steps: S1, providing tantalum oxide powder; s2, carrying out compression molding on the tantalum oxide powder by adopting a cold isostatic pressing method; s3, carrying out two-step sintering molding on the pressed blank in an oxygen atmosphere; s4, after the target material is sintered, machining treatment is carried out; the tantalum oxide sputtering target material with high density and uniform grain size is obtained through the method, meanwhile, the large-specification sputtering target material is easier to prepare through the method, the limitation of hot pressing or hot isostatic pressing equipment on the size of the sputtering target material is completely overcome, and the actual application of preparing a tantalum oxide film layer through magnetron sputtering is better met.
本发明属溅射靶材技术领域，具体涉及一种氧化钽靶材及其制备方法。该方法制备过程包括步骤S1提供氧化钽粉体；S2将氧化钽粉体采用冷等静压方法压制成型；S3将压制坯在氧气气氛中进行两步烧结成型；S4靶材烧结完成后进行机械加工处理；通过该发明得到高致密度、晶粒尺寸均匀的氧化钽溅射靶材，同时该方法更容易制备大规格的溅射靶材，完全克服热压或热等静压设备对溅射靶材尺寸的限制，更有利于满足磁控溅射制备氧化钽膜层的实际应用。
Preparation method of tantalum oxide target material
一种氧化钽靶材的制备方法
ZHANG XUEFENG (Autor:in) / GUO YAJUN (Autor:in) / LI SHUAIFANG (Autor:in) / CHEN YAGUANG (Autor:in) / ZHANG ZEYANG (Autor:in) / NIAN WENWEN (Autor:in)
07.04.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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