Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Tantalum-silicon oxide target material and preparation method thereof
The invention provides a tantalum-silicon oxide target material and a preparation method thereof, and the preparation method comprises the following steps: mixing tantalum pentoxide powder and silicon powder to obtain mixed powder, and then filling a mold with the mixed powder; the mixed powder and the mold are integrally placed in hot pressing sintering equipment, vacuumizing is carried out after primary pressurization treatment is carried out, then primary heating treatment is carried out, protective gas is filled, and secondary heating treatment is carried out; and after the secondary heating treatment, maintaining the temperature, carrying out secondary pressurizing treatment, cooling and depressurizing, and machining to obtain the tantalum-silicon oxide target material. According to the method, tantalum pentoxide powder and silicon powder are used as raw materials, the characteristics of the raw materials are utilized, and the heating and pressurizing process in the hot pressing sintering process is controlled, so that the target material product is high in density, uniform in microstructure, free of pores and small in resistivity fluctuation range, and the requirements of magnetron sputtering for the purity, density and resistivity of the target material can be met; the method effectively solves the problem that the tantalum-silicon oxide target material is easy to crack, and the yield of the product is high.
本发明提供了一种钽硅氧化物靶材及其制备方法，所述制备方法包括：将五氧化二钽粉末和硅粉混合得到混合粉料，然后装填到模具中；将混合粉料和模具整体置于热压烧结设备中，经一次加压处理后抽真空，然后进行一次加热处理，再充入保护性气体，进行二次加热处理；所述二次加热处理后，维持温度进行二次加压处理，降温降压后再经机加工，得到钽硅氧化物靶材。本发明所述方法以五氧化二钽粉末和硅粉为原料，利用原料特性，控制热压烧结过程中的加热加压进程，使得靶材产品致密度高，微观结构均匀且无气孔，电阻率波动范围小，能够满足磁控溅射对靶材纯度、密度和电阻率的要求；所述方法有效解决钽硅氧化物靶材容易开裂的问题，产品的成材率高。
Tantalum-silicon oxide target material and preparation method thereof
The invention provides a tantalum-silicon oxide target material and a preparation method thereof, and the preparation method comprises the following steps: mixing tantalum pentoxide powder and silicon powder to obtain mixed powder, and then filling a mold with the mixed powder; the mixed powder and the mold are integrally placed in hot pressing sintering equipment, vacuumizing is carried out after primary pressurization treatment is carried out, then primary heating treatment is carried out, protective gas is filled, and secondary heating treatment is carried out; and after the secondary heating treatment, maintaining the temperature, carrying out secondary pressurizing treatment, cooling and depressurizing, and machining to obtain the tantalum-silicon oxide target material. According to the method, tantalum pentoxide powder and silicon powder are used as raw materials, the characteristics of the raw materials are utilized, and the heating and pressurizing process in the hot pressing sintering process is controlled, so that the target material product is high in density, uniform in microstructure, free of pores and small in resistivity fluctuation range, and the requirements of magnetron sputtering for the purity, density and resistivity of the target material can be met; the method effectively solves the problem that the tantalum-silicon oxide target material is easy to crack, and the yield of the product is high.
本发明提供了一种钽硅氧化物靶材及其制备方法，所述制备方法包括：将五氧化二钽粉末和硅粉混合得到混合粉料，然后装填到模具中；将混合粉料和模具整体置于热压烧结设备中，经一次加压处理后抽真空，然后进行一次加热处理，再充入保护性气体，进行二次加热处理；所述二次加热处理后，维持温度进行二次加压处理，降温降压后再经机加工，得到钽硅氧化物靶材。本发明所述方法以五氧化二钽粉末和硅粉为原料，利用原料特性，控制热压烧结过程中的加热加压进程，使得靶材产品致密度高，微观结构均匀且无气孔，电阻率波动范围小，能够满足磁控溅射对靶材纯度、密度和电阻率的要求；所述方法有效解决钽硅氧化物靶材容易开裂的问题，产品的成材率高。
Tantalum-silicon oxide target material and preparation method thereof
一种钽硅氧化物靶材及其制备方法
YAO LIJUN (Autor:in) / PAN JIE (Autor:in) / YANG HUIZHEN (Autor:in) / ZHOU YOUPING (Autor:in) / LIAO PEIJUN (Autor:in)
22.08.2023
Patent
Elektronische Ressource
Chinesisch
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