Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of silicon nitride mobile phone backboard
The invention discloses a preparation method of a silicon nitride mobile phone backboard, which adopts a silicon nitride dry pressing and sintering mode and combines with vacuum coating to carry out surface coloring. The brightness of the mobile phone backboard is smaller than 48, the strength of the mobile phone backboard is larger than 600 MPa, the density of the mobile phone backboard is 3.0-3.3 g/cm < 3 >, the fracture toughness of the mobile phone backboard is 10 MPam < 1/2 > or above, the surface hardness of the mobile phone backboard is 1200 HV or above, the thermal shock resistance of the mobile phone backboard is that macroscopic damage to a matrix and a surface coating does not occur after 1000 times of thermal cycles at the temperature of-65 DEG C to 150 DEG C, and the surface roughness of the mobile phone backboard is smaller than 0.016 micrometers. The mobile phone backboard prepared through the method has the advantages of being high in impact toughness, good in mechanical property, high in heat conductivity coefficient, low in density, small in signal loss and the like.
本发明公开了一种氮化硅手机背板的制备方法，采用氮化硅干压成型烧结的方式，结合真空镀膜进行表面着色，最终获得明度小于48、强度大于600MPa、密度为3.0‑3.3g/cm3、断裂韧性10MPam1/2以上、表面硬度1200HV以上、抗热震能力为‑65℃‑150℃热循环1000次基体及表面镀层不出现肉眼可见的损坏、表面粗糙度小于0.016微米的手机背板；采用该方法制备的手机背板具有冲击韧性高、力学性能好、导热系数高、密度低、信号损耗小等优点。
Preparation method of silicon nitride mobile phone backboard
The invention discloses a preparation method of a silicon nitride mobile phone backboard, which adopts a silicon nitride dry pressing and sintering mode and combines with vacuum coating to carry out surface coloring. The brightness of the mobile phone backboard is smaller than 48, the strength of the mobile phone backboard is larger than 600 MPa, the density of the mobile phone backboard is 3.0-3.3 g/cm < 3 >, the fracture toughness of the mobile phone backboard is 10 MPam < 1/2 > or above, the surface hardness of the mobile phone backboard is 1200 HV or above, the thermal shock resistance of the mobile phone backboard is that macroscopic damage to a matrix and a surface coating does not occur after 1000 times of thermal cycles at the temperature of-65 DEG C to 150 DEG C, and the surface roughness of the mobile phone backboard is smaller than 0.016 micrometers. The mobile phone backboard prepared through the method has the advantages of being high in impact toughness, good in mechanical property, high in heat conductivity coefficient, low in density, small in signal loss and the like.
本发明公开了一种氮化硅手机背板的制备方法，采用氮化硅干压成型烧结的方式，结合真空镀膜进行表面着色，最终获得明度小于48、强度大于600MPa、密度为3.0‑3.3g/cm3、断裂韧性10MPam1/2以上、表面硬度1200HV以上、抗热震能力为‑65℃‑150℃热循环1000次基体及表面镀层不出现肉眼可见的损坏、表面粗糙度小于0.016微米的手机背板；采用该方法制备的手机背板具有冲击韧性高、力学性能好、导热系数高、密度低、信号损耗小等优点。
Preparation method of silicon nitride mobile phone backboard
一种氮化硅手机背板的制备方法
ZHOU YAN (Autor:in) / GUO JIAN (Autor:in) / YANG MINGHAO (Autor:in)
14.04.2023
Patent
Elektronische Ressource
Chinesisch
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