Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Indium tin zinc oxide target material and preparation method thereof
The embodiment of the invention discloses a preparation method of an indium tin zinc oxide target material, which comprises the following steps: mixing nano indium oxide powder, nano tin oxide powder and nano zinc oxide powder according to a set proportion to obtain mixed powder; mixing the obtained mixed powder with a defoaming agent, a dispersing agent and a binding agent according to a set proportion, and then sequentially carrying out high-speed dispersion treatment, ultrasonic treatment and ball-milling mixing to obtain mixed slurry; carrying out spray granulation on the mixed slurry to obtain mixed powder of indium oxide, tin oxide and zinc oxide; carrying out spark plasma sintering on the obtained mixed powder; and annealing a product obtained by sintering to obtain the indium tin zinc oxide target material. The obtained indium tin zinc oxide target material is high in carrier mobility, can be used as a raw material with excellent performance to prepare oxide semiconductors and thin film transistors with excellent performance, and has a good application prospect in the technical field of semiconductor display.
本发明实施例公开了氧化铟锡锌靶材的制备方法，包括：纳米氧化铟粉体、纳米氧化锡粉体和纳米氧化锌粉体按照设定比例混合，得到混合粉体；得到的混合粉体与设定比例的消泡剂、分散剂、粘结剂混合，然后依次经过高速分散处理、超声处理和球磨混合，得到混合浆料；混合浆料经过喷雾造粒，得到氧化铟、氧化锡、氧化锌混合粉体；得到的混合粉体经过放电等离子烧结；烧结得到的产物经过退火，得到氧化铟锡锌靶材。得到的氧化铟锡锌靶材载流子迁移率高，能够作为性能优良的原料制备性能优良的氧化物半导体和薄膜晶体管，在半导体显示技术领域有良好应用前景。
Indium tin zinc oxide target material and preparation method thereof
The embodiment of the invention discloses a preparation method of an indium tin zinc oxide target material, which comprises the following steps: mixing nano indium oxide powder, nano tin oxide powder and nano zinc oxide powder according to a set proportion to obtain mixed powder; mixing the obtained mixed powder with a defoaming agent, a dispersing agent and a binding agent according to a set proportion, and then sequentially carrying out high-speed dispersion treatment, ultrasonic treatment and ball-milling mixing to obtain mixed slurry; carrying out spray granulation on the mixed slurry to obtain mixed powder of indium oxide, tin oxide and zinc oxide; carrying out spark plasma sintering on the obtained mixed powder; and annealing a product obtained by sintering to obtain the indium tin zinc oxide target material. The obtained indium tin zinc oxide target material is high in carrier mobility, can be used as a raw material with excellent performance to prepare oxide semiconductors and thin film transistors with excellent performance, and has a good application prospect in the technical field of semiconductor display.
本发明实施例公开了氧化铟锡锌靶材的制备方法，包括：纳米氧化铟粉体、纳米氧化锡粉体和纳米氧化锌粉体按照设定比例混合，得到混合粉体；得到的混合粉体与设定比例的消泡剂、分散剂、粘结剂混合，然后依次经过高速分散处理、超声处理和球磨混合，得到混合浆料；混合浆料经过喷雾造粒，得到氧化铟、氧化锡、氧化锌混合粉体；得到的混合粉体经过放电等离子烧结；烧结得到的产物经过退火，得到氧化铟锡锌靶材。得到的氧化铟锡锌靶材载流子迁移率高，能够作为性能优良的原料制备性能优良的氧化物半导体和薄膜晶体管，在半导体显示技术领域有良好应用前景。
Indium tin zinc oxide target material and preparation method thereof
氧化铟锡锌靶材及其制备方法
LI JINGHUI (Autor:in) / LIU MIAO (Autor:in) / SUN BENSHUANG (Autor:in) / WANG CHENGDUO (Autor:in) / CHEN JIE (Autor:in) / LIU YANG (Autor:in) / ZENG XUEYUN (Autor:in) / WANG ZHIJUN (Autor:in)
13.06.2023
Patent
Elektronische Ressource
Chinesisch
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