Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Large-size indium zinc oxide target material and preparation method thereof
The invention belongs to the technical field of semiconductors, and discloses a preparation method of a large-size indium zinc oxide target material, which comprises the following steps: step 1, sintering an indium zinc oxide target blank at 600-800 DEG C; 2, placing two or more indium zinc oxide target blanks treated in the step 1 side by side, wherein a gap is reserved between every two adjacent indium zinc oxide target blanks; 3, thermoplastic slurry is injected into the gaps, wherein the slurry contains indium zinc oxide powder; and 4, sintering under the condition of 1500-1600 DEG C to obtain the indium zinc oxide target material. According to the method, thermoplastic slurry is adopted as a binding material, a target blank is subjected to low-temperature sintering before binding, target material particles can be preliminarily combined, the target material is prevented from collapsing, high-temperature sintering is performed after binding, and the large-size indium zinc oxide target material with the high qualified rate can be obtained. Meanwhile, the invention further provides the large-size indium zinc oxide target material.
本发明属于半导体技术领域，公开了一种大尺寸氧化铟锌靶材的制备方法，包括如下步骤：步骤1：将氧化铟锌靶胚在600～800℃的条件下烧结；步骤2：将两块或多块经步骤1处理得到的氧化铟锌靶胚并排放置，相邻两块氧化铟锌靶胚留有间隙；步骤3：向间隙中注入热塑性的浆料，所述浆料中含有氧化铟锌粉末；步骤4：在1500～1600℃的条件下烧结，得到氧化铟锌靶材。该方法采用热塑性的浆料作为粘结材料，在粘结前对靶胚进行低温烧结，可以使得靶材颗粒得到初步的结合，防止靶材崩散，粘结后再高温烧结，可以得到合格率高的大尺寸氧化铟锌靶材。同时，本发明还提供了该大尺寸氧化铟锌靶材。
Large-size indium zinc oxide target material and preparation method thereof
The invention belongs to the technical field of semiconductors, and discloses a preparation method of a large-size indium zinc oxide target material, which comprises the following steps: step 1, sintering an indium zinc oxide target blank at 600-800 DEG C; 2, placing two or more indium zinc oxide target blanks treated in the step 1 side by side, wherein a gap is reserved between every two adjacent indium zinc oxide target blanks; 3, thermoplastic slurry is injected into the gaps, wherein the slurry contains indium zinc oxide powder; and 4, sintering under the condition of 1500-1600 DEG C to obtain the indium zinc oxide target material. According to the method, thermoplastic slurry is adopted as a binding material, a target blank is subjected to low-temperature sintering before binding, target material particles can be preliminarily combined, the target material is prevented from collapsing, high-temperature sintering is performed after binding, and the large-size indium zinc oxide target material with the high qualified rate can be obtained. Meanwhile, the invention further provides the large-size indium zinc oxide target material.
本发明属于半导体技术领域，公开了一种大尺寸氧化铟锌靶材的制备方法，包括如下步骤：步骤1：将氧化铟锌靶胚在600～800℃的条件下烧结；步骤2：将两块或多块经步骤1处理得到的氧化铟锌靶胚并排放置，相邻两块氧化铟锌靶胚留有间隙；步骤3：向间隙中注入热塑性的浆料，所述浆料中含有氧化铟锌粉末；步骤4：在1500～1600℃的条件下烧结，得到氧化铟锌靶材。该方法采用热塑性的浆料作为粘结材料，在粘结前对靶胚进行低温烧结，可以使得靶材颗粒得到初步的结合，防止靶材崩散，粘结后再高温烧结，可以得到合格率高的大尺寸氧化铟锌靶材。同时，本发明还提供了该大尺寸氧化铟锌靶材。
Large-size indium zinc oxide target material and preparation method thereof
一种大尺寸氧化铟锌靶材及其制备方法
LUO SISHI (Autor:in) / LI KAIJIE (Autor:in) / SHAO XUELIANG (Autor:in) / GU DESHENG (Autor:in) / ZHANG XINGYU (Autor:in)
29.03.2024
Patent
Elektronische Ressource
Chinesisch
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