Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Preparation method of high-density indium oxide doped cerium-titanium-tantalum target material
The invention belongs to the technical field of semiconductors and oxide target materials, and discloses a preparation method of a high-density indium oxide doped cerium-titanium-tantalum target material. The preparation method comprises the following steps: adding TiO2, Ta2O5, CeO2 and In2O3 powder, a dispersant, a binder and deionized water into a ball milling tank, and carrying out wet ball milling to obtain mixed slurry; drying, crushing and sieving the mixed slurry, then calcining in an air atmosphere at the temperature of 600-800 DEG C, and carrying out compression molding to obtain a target blank; and then the target blank is put into vacuum equipment to be subjected to vacuumizing treatment and oxygenation treatment till the pressure ranges from 60 KPa to 100 KPa, the treated target material is heated to 1,450 DEG C to 1,500 DEG C to be sintered, and the high-compactness indium oxide doped cerium-titanium-tantalum target material is obtained. According to the method, the target blank is subjected to vacuumizing treatment and oxygenation treatment under certain pressure before sintering, so that the relative density, bending strength and mobility of the target material can be remarkably improved.
本发明属于半导体及氧化物靶材技术领域，公开了一种高致密氧化铟掺杂铈钛钽靶材的制备方法。所述制备方法包括如下步骤：将TiO2、Ta2O5、CeO2、In2O3粉末与分散剂、粘结剂和去离子水加入到球磨罐中进行湿法球磨，得到混合浆料；将混合浆料经干燥、粉碎、过筛，然后在空气气氛及600～800℃温度下煅烧处理，压制成型，得到靶坯；再将靶坯放入真空设备中进行抽真空处理和充氧处理至压力为60～100KPa，将处理后的靶材升温至1450～1500℃进行烧结处理，得到高致密氧化铟掺杂铈钛钽靶材。本发明通过在烧结之前对靶坯进行抽真空处理和一定压力的充氧处理，可以显著提高靶材相对密度、抗弯强度和迁移率。
Preparation method of high-density indium oxide doped cerium-titanium-tantalum target material
The invention belongs to the technical field of semiconductors and oxide target materials, and discloses a preparation method of a high-density indium oxide doped cerium-titanium-tantalum target material. The preparation method comprises the following steps: adding TiO2, Ta2O5, CeO2 and In2O3 powder, a dispersant, a binder and deionized water into a ball milling tank, and carrying out wet ball milling to obtain mixed slurry; drying, crushing and sieving the mixed slurry, then calcining in an air atmosphere at the temperature of 600-800 DEG C, and carrying out compression molding to obtain a target blank; and then the target blank is put into vacuum equipment to be subjected to vacuumizing treatment and oxygenation treatment till the pressure ranges from 60 KPa to 100 KPa, the treated target material is heated to 1,450 DEG C to 1,500 DEG C to be sintered, and the high-compactness indium oxide doped cerium-titanium-tantalum target material is obtained. According to the method, the target blank is subjected to vacuumizing treatment and oxygenation treatment under certain pressure before sintering, so that the relative density, bending strength and mobility of the target material can be remarkably improved.
本发明属于半导体及氧化物靶材技术领域，公开了一种高致密氧化铟掺杂铈钛钽靶材的制备方法。所述制备方法包括如下步骤：将TiO2、Ta2O5、CeO2、In2O3粉末与分散剂、粘结剂和去离子水加入到球磨罐中进行湿法球磨，得到混合浆料；将混合浆料经干燥、粉碎、过筛，然后在空气气氛及600～800℃温度下煅烧处理，压制成型，得到靶坯；再将靶坯放入真空设备中进行抽真空处理和充氧处理至压力为60～100KPa，将处理后的靶材升温至1450～1500℃进行烧结处理，得到高致密氧化铟掺杂铈钛钽靶材。本发明通过在烧结之前对靶坯进行抽真空处理和一定压力的充氧处理，可以显著提高靶材相对密度、抗弯强度和迁移率。
Preparation method of high-density indium oxide doped cerium-titanium-tantalum target material
一种高致密氧化铟掺杂铈钛钽靶材的制备方法
TAN HONGLEI (Autor:in) / SHAO XUELIANG (Autor:in) / LI KAIJIE (Autor:in) / GU DESHENG (Autor:in) / ZHANG XINGYU (Autor:in)
08.12.2023
Patent
Elektronische Ressource
Chinesisch
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