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High-transmittance indium terbium tantalum titanium holmium oxide target material and preparation method thereof
The invention relates to the technical field of target production, and discloses a preparation method of a high-transmittance indium terbium tantalum titanium holmium oxide target, which specifically comprises the following steps: preparing a target precursor from indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder in a mass ratio of (94.8-96.2): (0.1-0.5): (1.0-1.3): (2.0-2.5): (0.7-0.9), and then carrying out aerobic sintering. The indium oxide content of the target material is controlled to be 96.5% or below, and through doping of terbium, tantalum, titanium and holmium, the transmittance can be improved, and the resistivity can be reduced. Meanwhile, the invention further discloses the target material.
本申请涉及靶材生产技术领域，公开了一种高透过率的氧化铟铽钽钛钬靶材的制备方法，所述方法具体为：采用质量比为94.8～96.2:0.1～0.5:1.0～1.3:2.0～2.5:0.7～0.9的氧化铟粉末、氧化铽粉末、氧化钽粉末、氧化钛粉末和氧化钬粉末制备成为靶材前驱体，然后进行有氧烧结。该靶材的氧化铟控制在96.5％以下，通过铽钽钛钬的掺杂，可以提高透过率和降低电阻率。同时，本发明还公开了该靶材。
High-transmittance indium terbium tantalum titanium holmium oxide target material and preparation method thereof
The invention relates to the technical field of target production, and discloses a preparation method of a high-transmittance indium terbium tantalum titanium holmium oxide target, which specifically comprises the following steps: preparing a target precursor from indium oxide powder, terbium oxide powder, tantalum oxide powder, titanium oxide powder and holmium oxide powder in a mass ratio of (94.8-96.2): (0.1-0.5): (1.0-1.3): (2.0-2.5): (0.7-0.9), and then carrying out aerobic sintering. The indium oxide content of the target material is controlled to be 96.5% or below, and through doping of terbium, tantalum, titanium and holmium, the transmittance can be improved, and the resistivity can be reduced. Meanwhile, the invention further discloses the target material.
本申请涉及靶材生产技术领域，公开了一种高透过率的氧化铟铽钽钛钬靶材的制备方法，所述方法具体为：采用质量比为94.8～96.2:0.1～0.5:1.0～1.3:2.0～2.5:0.7～0.9的氧化铟粉末、氧化铽粉末、氧化钽粉末、氧化钛粉末和氧化钬粉末制备成为靶材前驱体，然后进行有氧烧结。该靶材的氧化铟控制在96.5％以下，通过铽钽钛钬的掺杂，可以提高透过率和降低电阻率。同时，本发明还公开了该靶材。
High-transmittance indium terbium tantalum titanium holmium oxide target material and preparation method thereof
一种高透过率的氧化铟铽钽钛钬靶材及其制备方法
LI KAIJIE (Autor:in) / SHAO XUELIANG (Autor:in) / GU DESHENG (Autor:in) / ZHANG XINGYU (Autor:in) / LUO SISHI (Autor:in)
12.12.2023
Patent
Elektronische Ressource
Chinesisch
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