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Temperature-stable microwave dielectric material and preparation method thereof
The invention belongs to the field of electronic ceramics. The invention particularly provides a temperature-stable microwave dielectric material and a preparation method thereof. The chemical expression of the material is CaB2O4 + x wt% TiO2, wherein x is more than or equal to 10 and less than or equal to 15. CaB2O4 is used as a main crystal phase, and TiO2 is used as a secondary crystal phase. The sintering temperature is 900 to 950 DEG C. The invention aims to solve the problem that a microwave dielectric material cannot be applied to a device due to an overlarge resonant frequency temperature coefficient. Particularly, when x is more than or equal to 11 and less than or equal to 14 and the sintering temperature is 950 DEG C, the dielectric constant is 7-9, the Q * f value is 14000GHz-19000GHz, and the temperature coefficient of resonance frequency is-7-2ppm/DEG C. Meanwhile, the microwave dielectric material disclosed by the invention is simple in preparation process, low in raw material price, rich in reserves and beneficial to industrial production.
本发明属于电子陶瓷领域。具体提供了一种温度稳定型微波介质材料及其制备方法。本发明所述材料化学表达式为CaB2O4+x wt％TiO2，其中10≤x≤15。以CaB2O4为主晶相，TiO2为次晶相。烧结温度为900～950℃。本发明旨在解决微波介质材料因谐振频率温度系数过大，不能在器件中应用的问题。尤其是在11≤x≤14，烧结温度950℃时，介电常数为7～9，Q×f值为14000GHz～19000GHz，谐振频率温度系数为‑7～2ppm/℃。同时,本发明所述微波介质材料制备工艺简单,原料价格低廉、储量丰富，有利于工业化生产。
Temperature-stable microwave dielectric material and preparation method thereof
The invention belongs to the field of electronic ceramics. The invention particularly provides a temperature-stable microwave dielectric material and a preparation method thereof. The chemical expression of the material is CaB2O4 + x wt% TiO2, wherein x is more than or equal to 10 and less than or equal to 15. CaB2O4 is used as a main crystal phase, and TiO2 is used as a secondary crystal phase. The sintering temperature is 900 to 950 DEG C. The invention aims to solve the problem that a microwave dielectric material cannot be applied to a device due to an overlarge resonant frequency temperature coefficient. Particularly, when x is more than or equal to 11 and less than or equal to 14 and the sintering temperature is 950 DEG C, the dielectric constant is 7-9, the Q * f value is 14000GHz-19000GHz, and the temperature coefficient of resonance frequency is-7-2ppm/DEG C. Meanwhile, the microwave dielectric material disclosed by the invention is simple in preparation process, low in raw material price, rich in reserves and beneficial to industrial production.
本发明属于电子陶瓷领域。具体提供了一种温度稳定型微波介质材料及其制备方法。本发明所述材料化学表达式为CaB2O4+x wt％TiO2，其中10≤x≤15。以CaB2O4为主晶相，TiO2为次晶相。烧结温度为900～950℃。本发明旨在解决微波介质材料因谐振频率温度系数过大，不能在器件中应用的问题。尤其是在11≤x≤14，烧结温度950℃时，介电常数为7～9，Q×f值为14000GHz～19000GHz，谐振频率温度系数为‑7～2ppm/℃。同时,本发明所述微波介质材料制备工艺简单,原料价格低廉、储量丰富，有利于工业化生产。
Temperature-stable microwave dielectric material and preparation method thereof
一种温度稳定型微波介质材料及其制备方法
LI BO (Autor:in) / ZHANG ZHONGQUAN (Autor:in) / FENG RUIXUAN (Autor:in)
29.12.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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