Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Method for preparing IGBT (Insulated Gate Bipolar Translator) ceramic copper-clad substrate by hot isostatic pressing sintering
The invention belongs to the field of active metal brazing, and discloses a method for preparing an IGBT (Insulated Gate Bipolar Translator) ceramic copper-clad substrate by hot isostatic pressing sintering. According to the method, the active metal brazing filler metal is added under limited specific conditions to enable the ceramic and the copper to be combined, the wettability of combination of the ceramic and the copper can be effectively improved, and high-strength tight connection between the ceramic and the metal copper is achieved by adopting a hot-pressing sintering furnace for vacuum sheathing and a hot isostatic pressing sintering process. And the problems of low bonding strength and the like of the ceramic copper-clad substrate in a high-power semiconductor device can be effectively solved. The problems that steps for preparing the ceramic copper-clad substrate are tedious, and consumed time is long are solved.
本发明属于活性金属钎焊领域，公开了一种用热等静压烧结制备IGBT陶瓷覆铜基板的方法。本发明通过限定具体条件下添加活性金属钎料使陶瓷与铜结合，能够有效改善陶瓷与铜结合的润湿性能，并采用热压烧结炉进行真空包套及热等静压烧结工艺实现陶瓷与金属铜之间的高强度紧密连接，可以有效解决陶瓷覆铜基板在大功率半导体器件中的结合强度低等问题。解决制备陶瓷覆铜基板步骤繁琐，耗时较长的问题。
Method for preparing IGBT (Insulated Gate Bipolar Translator) ceramic copper-clad substrate by hot isostatic pressing sintering
The invention belongs to the field of active metal brazing, and discloses a method for preparing an IGBT (Insulated Gate Bipolar Translator) ceramic copper-clad substrate by hot isostatic pressing sintering. According to the method, the active metal brazing filler metal is added under limited specific conditions to enable the ceramic and the copper to be combined, the wettability of combination of the ceramic and the copper can be effectively improved, and high-strength tight connection between the ceramic and the metal copper is achieved by adopting a hot-pressing sintering furnace for vacuum sheathing and a hot isostatic pressing sintering process. And the problems of low bonding strength and the like of the ceramic copper-clad substrate in a high-power semiconductor device can be effectively solved. The problems that steps for preparing the ceramic copper-clad substrate are tedious, and consumed time is long are solved.
本发明属于活性金属钎焊领域，公开了一种用热等静压烧结制备IGBT陶瓷覆铜基板的方法。本发明通过限定具体条件下添加活性金属钎料使陶瓷与铜结合，能够有效改善陶瓷与铜结合的润湿性能，并采用热压烧结炉进行真空包套及热等静压烧结工艺实现陶瓷与金属铜之间的高强度紧密连接，可以有效解决陶瓷覆铜基板在大功率半导体器件中的结合强度低等问题。解决制备陶瓷覆铜基板步骤繁琐，耗时较长的问题。
Method for preparing IGBT (Insulated Gate Bipolar Translator) ceramic copper-clad substrate by hot isostatic pressing sintering
一种用热等静压烧结制备IGBT陶瓷覆铜基板的方法
WANG XING'AN (Autor:in) / HAN SHUANG (Autor:in) / LUO LING (Autor:in) / SUN XUDONG (Autor:in) / LYU HUI (Autor:in) / REN PEI (Autor:in) / BAI XIAOLONG (Autor:in) / SUN JING (Autor:in) / HUI YU (Autor:in) / LIU XUDONG (Autor:in)
05.01.2024
Patent
Elektronische Ressource
Chinesisch
| Europäisches Patentamt | 2022
Silicon carbide ceramic and hot isostatic pressing sintering process thereof
| Europäisches Patentamt | 2021
Method for preparing piezoelectric ceramic based on hot isostatic pressing process
| Europäisches Patentamt | 2022
Method for simultaneously sintering two surfaces of copper-clad ceramic substrate
| Europäisches Patentamt | 2022
| Europäisches Patentamt | 2024