Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Manufacturing method of ITO target material with high structure uniformity
The invention discloses a manufacturing method of an ITO (indium tin oxide) target with high structure uniformity, and particularly relates to the technical field of high-end ITO target product preparation. Step 2, mixing of SnO2; step 3, ball-milling, mixing and depolymerizing; 4, continuously carrying out ball milling and mixing; step 5, dispersing by a homogenizer; step 6, spray granulation; step 7, mold pressing and CIP; 8, drying, degreasing and sintering the green body; step 9, processing; and tenthly, surface treatment is conducted. By controlling various parameters such as sintering temperature, time and the like, the ITO target material with higher structure and performance can be obtained, the ITO target material which is uniform in second phase distribution, uniform in grain size, extremely few in micropores and less than 0.2 mu m and has overall high structure uniformity can be produced, the main index requirements of a high-end TFT-LCD (Thin Film Transistor Liquid Crystal Display) on a target material product can be met, and the production cost is reduced. And the performance and reliability of the electronic device are improved.
本发明公开了一种具有高度组织均匀性ITO靶材的制造方法，具体涉及高端ITO靶材产品制备技术领域，步骤一、原料预处理；步骤二、SnO2的混合；步骤三、球磨混合解聚；步骤四、继续球磨混合；步骤五、均化器分散；步骤六、喷雾造粒；步骤七、模压和CIP；步骤八、坯体的干燥、脱脂和烧结；步骤九、加工；步骤十、表面处理。本发明通过对烧结温度、时间等各项参数的控制，能够获得具有更高组织和性能的ITO靶材，即可生产出第二相分布均匀、晶粒尺寸均匀、微孔极少且均在0.2μm以下的整体具有高度组织均匀性ITO靶材，可满足高端TFT‑LCD对靶材产品的主要指标要求，提高电子器件的性能和可靠性。
Manufacturing method of ITO target material with high structure uniformity
The invention discloses a manufacturing method of an ITO (indium tin oxide) target with high structure uniformity, and particularly relates to the technical field of high-end ITO target product preparation. Step 2, mixing of SnO2; step 3, ball-milling, mixing and depolymerizing; 4, continuously carrying out ball milling and mixing; step 5, dispersing by a homogenizer; step 6, spray granulation; step 7, mold pressing and CIP; 8, drying, degreasing and sintering the green body; step 9, processing; and tenthly, surface treatment is conducted. By controlling various parameters such as sintering temperature, time and the like, the ITO target material with higher structure and performance can be obtained, the ITO target material which is uniform in second phase distribution, uniform in grain size, extremely few in micropores and less than 0.2 mu m and has overall high structure uniformity can be produced, the main index requirements of a high-end TFT-LCD (Thin Film Transistor Liquid Crystal Display) on a target material product can be met, and the production cost is reduced. And the performance and reliability of the electronic device are improved.
本发明公开了一种具有高度组织均匀性ITO靶材的制造方法，具体涉及高端ITO靶材产品制备技术领域，步骤一、原料预处理；步骤二、SnO2的混合；步骤三、球磨混合解聚；步骤四、继续球磨混合；步骤五、均化器分散；步骤六、喷雾造粒；步骤七、模压和CIP；步骤八、坯体的干燥、脱脂和烧结；步骤九、加工；步骤十、表面处理。本发明通过对烧结温度、时间等各项参数的控制，能够获得具有更高组织和性能的ITO靶材，即可生产出第二相分布均匀、晶粒尺寸均匀、微孔极少且均在0.2μm以下的整体具有高度组织均匀性ITO靶材，可满足高端TFT‑LCD对靶材产品的主要指标要求，提高电子器件的性能和可靠性。
Manufacturing method of ITO target material with high structure uniformity
一种具有高度组织均匀性ITO靶材的制造方法
SHIKE KEISUKE (Autor:in) / LYU GUANGHUI (Autor:in) / MA JUNPU (Autor:in) / HE GANG (Autor:in) / YAO QINGLIANG (Autor:in) / SONG GUANGZHI (Autor:in)
16.01.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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