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Gallium-zinc-doped tin oxide target material and preparation method thereof
The invention relates to the field of material science, in particular to a gallium-zinc-doped tin oxide target material and a preparation method thereof.The preparation method comprises the following specific steps that S1, powder is mixed to obtain mixed slurry; s2, the slurry is sanded, and sanded slurry is obtained; s3, granulating the powder to obtain a mixture; s4, performing cold press molding to obtain a preformed body; s5, performing primary dehydration to obtain a primary preform; s6, performing secondary dehydration to obtain a secondary preform; and S7, sintering the target material to obtain the gallium-zinc-doped tin oxide target material. Nanoscale tin oxide, gallium oxide and zinc oxide which are high in specific surface area and purity are selected as raw materials, the high-density target material is obtained through powder mixing, slurry sanding, powder granulation, cold press molding, primary dehydration, secondary dehydration and target material sintering, and the high-density target material has huge market potential and wide application prospects and is suitable for industrial production. And important technical support is provided for the development of electronic devices and photoelectric devices.
本发明涉及材料科学领域,具体涉及一种掺杂镓锌的氧化锡靶材及其制备方法,包括以下具体步骤:S1.混合配粉,得到混合浆料;S2.浆料砂磨,得到砂磨浆料;S3.粉末造粒,得到混合料;S4.冷压成型,得到预成型体;S5.一次脱水,得到一次预制体;S6.二次脱水,得到二次预制体;S7.靶材烧结:得到掺杂镓锌的氧化锡靶材。本发明选用纳米级、高比表面积和高纯度的氧化锡、氧化镓和氧化锌作为原材料,经过混合配粉、浆料砂磨、粉末造粒、冷压成型、一次脱水、二次脱水和靶材烧结,得到高密度的靶材,具有巨大的市场潜力和广阔的应用前景,为电子器件和光电器件的发展提供了重要的技术支持。
Gallium-zinc-doped tin oxide target material and preparation method thereof
The invention relates to the field of material science, in particular to a gallium-zinc-doped tin oxide target material and a preparation method thereof.The preparation method comprises the following specific steps that S1, powder is mixed to obtain mixed slurry; s2, the slurry is sanded, and sanded slurry is obtained; s3, granulating the powder to obtain a mixture; s4, performing cold press molding to obtain a preformed body; s5, performing primary dehydration to obtain a primary preform; s6, performing secondary dehydration to obtain a secondary preform; and S7, sintering the target material to obtain the gallium-zinc-doped tin oxide target material. Nanoscale tin oxide, gallium oxide and zinc oxide which are high in specific surface area and purity are selected as raw materials, the high-density target material is obtained through powder mixing, slurry sanding, powder granulation, cold press molding, primary dehydration, secondary dehydration and target material sintering, and the high-density target material has huge market potential and wide application prospects and is suitable for industrial production. And important technical support is provided for the development of electronic devices and photoelectric devices.
本发明涉及材料科学领域,具体涉及一种掺杂镓锌的氧化锡靶材及其制备方法,包括以下具体步骤:S1.混合配粉,得到混合浆料;S2.浆料砂磨,得到砂磨浆料;S3.粉末造粒,得到混合料;S4.冷压成型,得到预成型体;S5.一次脱水,得到一次预制体;S6.二次脱水,得到二次预制体;S7.靶材烧结:得到掺杂镓锌的氧化锡靶材。本发明选用纳米级、高比表面积和高纯度的氧化锡、氧化镓和氧化锌作为原材料,经过混合配粉、浆料砂磨、粉末造粒、冷压成型、一次脱水、二次脱水和靶材烧结,得到高密度的靶材,具有巨大的市场潜力和广阔的应用前景,为电子器件和光电器件的发展提供了重要的技术支持。
Gallium-zinc-doped tin oxide target material and preparation method thereof
一种掺杂镓锌的氧化锡靶材及其制备方法
ZENG DUNFENG (Autor:in) / WANG ZHIQIANG (Autor:in) / ZENG TAN (Autor:in) / CHEN GUANGYUAN (Autor:in)
16.04.2024
Patent
Elektronische Ressource
Chinesisch
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