Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Gallium-holmium-doped tin oxide target material and preparation method thereof
The invention discloses a gallium and holmium doped tin oxide target material and a preparation method thereof, the preparation method comprises the following steps: gallium oxide, holmium oxide and tin oxide are mixed, and the obtained mixture comprises the following components in percentage by mass: 0.2%-2% of gallium oxide, 0.1%-1% of holmium oxide and 97%-99.7% of tin oxide; and adding a dispersing agent, a binder and water, and carrying out granulation, mold pressing, cold isostatic pressing and sintering to obtain the gallium and holmium doped tin oxide target material. The gallium-holmium-doped tin oxide target material has the advantages of excellent conductivity, high visible light transmittance and the like, can adjust the carrier concentration and forbidden bandwidth of a thin film when being used for the transparent conductive thin film, so that the conductivity and visible light transmittance of the thin film are effectively improved, and the gallium-holmium-doped tin oxide target material has a very good application prospect.
本发明公开了一种掺杂镓钬的氧化锡靶材及其制备方法，该制备方法包括以下步骤：将氧化镓、氧化钬和氧化锡混合，所得混合物中，按质量百分含量计，包含氧化镓0.2%～2%，氧化钬0.1%～1%和氧化锡97%～99.7%；再加入分散剂、粘结剂和水，经造粒、模压、冷等静压、烧结，得到掺杂镓钬的氧化锡靶材。本发明的掺杂镓钬的氧化锡靶材，具有导电性能优异和可见光透过率高等优点，其用于透明导电薄膜时，可以调节薄膜的载流子浓度及禁带宽度，从而有效改善薄膜的导电性能和可见光透过率，具有很好的应用前景。
Gallium-holmium-doped tin oxide target material and preparation method thereof
The invention discloses a gallium and holmium doped tin oxide target material and a preparation method thereof, the preparation method comprises the following steps: gallium oxide, holmium oxide and tin oxide are mixed, and the obtained mixture comprises the following components in percentage by mass: 0.2%-2% of gallium oxide, 0.1%-1% of holmium oxide and 97%-99.7% of tin oxide; and adding a dispersing agent, a binder and water, and carrying out granulation, mold pressing, cold isostatic pressing and sintering to obtain the gallium and holmium doped tin oxide target material. The gallium-holmium-doped tin oxide target material has the advantages of excellent conductivity, high visible light transmittance and the like, can adjust the carrier concentration and forbidden bandwidth of a thin film when being used for the transparent conductive thin film, so that the conductivity and visible light transmittance of the thin film are effectively improved, and the gallium-holmium-doped tin oxide target material has a very good application prospect.
本发明公开了一种掺杂镓钬的氧化锡靶材及其制备方法，该制备方法包括以下步骤：将氧化镓、氧化钬和氧化锡混合，所得混合物中，按质量百分含量计，包含氧化镓0.2%～2%，氧化钬0.1%～1%和氧化锡97%～99.7%；再加入分散剂、粘结剂和水，经造粒、模压、冷等静压、烧结，得到掺杂镓钬的氧化锡靶材。本发明的掺杂镓钬的氧化锡靶材，具有导电性能优异和可见光透过率高等优点，其用于透明导电薄膜时，可以调节薄膜的载流子浓度及禁带宽度，从而有效改善薄膜的导电性能和可见光透过率，具有很好的应用前景。
Gallium-holmium-doped tin oxide target material and preparation method thereof
掺杂镓钬的氧化锡靶材及其制备方法
LI KAIJIE (Autor:in) / WANG QIFENG (Autor:in) / LUO SISHI (Autor:in) / LIN SHIHONG (Autor:in) / PAN JUNHUA (Autor:in)
08.11.2024
Patent
Elektronische Ressource
Chinesisch
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