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Direct copper-plated ceramic substrate and preparation method thereof
The invention provides a direct copper-plated ceramic substrate and a preparation method thereof. The method comprises the following steps: sputtering a first seed layer on the surface of a ceramic substrate with a through hole and the side wall of the through hole; performing copper electroplating on the surface of the ceramic substrate and the side wall of the through hole based on the first seed layer, and filling the through hole to obtain a copper through hole; removing the electroplated copper and the first seed layer on the surface of the ceramic substrate to obtain a ceramic substrate without a plating layer; sputtering a second seed layer on the surface of the ceramic substrate without the plating layer and the end face of the corresponding copper through hole; and carrying out graphical electroplating on the surface of the second seed layer to prepare the direct copper-plated ceramic substrate. On one hand, the second seed layer can completely block the two ends of the through hole, and the air tightness of the copper filling through hole is ensured. And on the other hand, the second seed layers at the two ends of the through hole are continuous on the surface of the ceramic substrate, tensile stress is uniformly dispersed on the surfaces of the whole second seed layers when the second seed layers bear the tensile stress, cracking caused by overlarge stress borne by a single point is avoided, and the air tightness of the copper filling through hole is further ensured.
本发明提供一种直接镀铜陶瓷基板及其制备方法,该方法包括:在设有通孔的陶瓷基板的表面及通孔侧壁溅射第一种子层;基于第一种子层,对陶瓷基板的表面及通孔侧壁进行电镀铜,填充通孔得到铜通孔;去除陶瓷基板表面的电镀铜及第一种子层,得到去镀层的陶瓷基板;在陶瓷基板去镀层的表面及对应的铜通孔的端面溅射第二种子层;在第二种子层的表面进行图形化电镀,制备得到直接镀铜陶瓷基板。本发明一方面,第二种子层可完全封堵通孔的两端,确保铜填充通孔的气密性。另一方面,通孔两端的第二种子层在陶瓷基板表面连续无间断,承受拉应力时整个第二种子层表面均匀分散拉应力,避免单点所受应力过大导致开裂,进一步确保了铜填充通孔的气密性。
Direct copper-plated ceramic substrate and preparation method thereof
The invention provides a direct copper-plated ceramic substrate and a preparation method thereof. The method comprises the following steps: sputtering a first seed layer on the surface of a ceramic substrate with a through hole and the side wall of the through hole; performing copper electroplating on the surface of the ceramic substrate and the side wall of the through hole based on the first seed layer, and filling the through hole to obtain a copper through hole; removing the electroplated copper and the first seed layer on the surface of the ceramic substrate to obtain a ceramic substrate without a plating layer; sputtering a second seed layer on the surface of the ceramic substrate without the plating layer and the end face of the corresponding copper through hole; and carrying out graphical electroplating on the surface of the second seed layer to prepare the direct copper-plated ceramic substrate. On one hand, the second seed layer can completely block the two ends of the through hole, and the air tightness of the copper filling through hole is ensured. And on the other hand, the second seed layers at the two ends of the through hole are continuous on the surface of the ceramic substrate, tensile stress is uniformly dispersed on the surfaces of the whole second seed layers when the second seed layers bear the tensile stress, cracking caused by overlarge stress borne by a single point is avoided, and the air tightness of the copper filling through hole is further ensured.
本发明提供一种直接镀铜陶瓷基板及其制备方法,该方法包括:在设有通孔的陶瓷基板的表面及通孔侧壁溅射第一种子层;基于第一种子层,对陶瓷基板的表面及通孔侧壁进行电镀铜,填充通孔得到铜通孔;去除陶瓷基板表面的电镀铜及第一种子层,得到去镀层的陶瓷基板;在陶瓷基板去镀层的表面及对应的铜通孔的端面溅射第二种子层;在第二种子层的表面进行图形化电镀,制备得到直接镀铜陶瓷基板。本发明一方面,第二种子层可完全封堵通孔的两端,确保铜填充通孔的气密性。另一方面,通孔两端的第二种子层在陶瓷基板表面连续无间断,承受拉应力时整个第二种子层表面均匀分散拉应力,避免单点所受应力过大导致开裂,进一步确保了铜填充通孔的气密性。
Direct copper-plated ceramic substrate and preparation method thereof
一种直接镀铜陶瓷基板及其制备方法
ZHANG HE (Autor:in) / YANG HUAN (Autor:in) / YANG ZHENTAO (Autor:in) / CAO ZHENGYU (Autor:in)
19.04.2024
Patent
Elektronische Ressource
Chinesisch
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