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Preparation method of high-heat-dissipation high-temperature co-fired ceramic substrate and ceramic substrate
The invention provides a preparation method of a high-heat-dissipation high-temperature co-fired ceramic substrate and the ceramic substrate. The method comprises the following steps: respectively depositing metal seeds on the upper surface and the lower surface of a pretreated ceramic substrate to obtain a first metal seed layer on the upper surface of the ceramic substrate and a second metal seed layer on the lower surface of the ceramic substrate; electroplating copper at first preset positions of the first metal seed layer and the second metal seed layer to obtain a copper-plated layer; second preset positions of the first metal seed layer and the second metal seed layer are etched, surface solder resists are manufactured on the upper surface and the lower surface of the ceramic substrate respectively, and solder mask layers of the ceramic substrate are obtained; wherein the second preset position is the remaining position of the first metal seed layer and the second metal seed layer except the first preset position; and manufacturing a surface metal pattern on the copper plating layer exposed between the solder mask layers, and carrying out annealing treatment on the manufactured ceramic substrate to obtain the high-heat-dissipation high-temperature co-fired ceramic substrate. The heat dissipation capability of the ceramic substrate can be improved.
本发明提供一种高散热高温共烧陶瓷基板的制备方法及陶瓷基板。该方法包括:在预处理后的陶瓷基板的上表面和下表面分别沉积金属种子,得到陶瓷基板上表面的第一金属种子层和下表面的第二金属种子层;在第一金属种子层和第二金属种子层的第一预设位置处电镀铜,得到镀铜层;对第一金属种子层和第二金属种子层的第二预设位置进行刻蚀,并在陶瓷基板的上表面和下表面分别制作表面阻焊,得到陶瓷基板的阻焊层;其中,第二预设位置为第一金属种子层和第二金属种子层的除第一预设位置外的剩余位置;在阻焊层之间露出的镀铜层上制作表面金属图形,并对制作完成的陶瓷基板进行退火处理,得到高散热高温共烧陶瓷基板。本发明能够提高陶瓷基板的散热能力。
Preparation method of high-heat-dissipation high-temperature co-fired ceramic substrate and ceramic substrate
The invention provides a preparation method of a high-heat-dissipation high-temperature co-fired ceramic substrate and the ceramic substrate. The method comprises the following steps: respectively depositing metal seeds on the upper surface and the lower surface of a pretreated ceramic substrate to obtain a first metal seed layer on the upper surface of the ceramic substrate and a second metal seed layer on the lower surface of the ceramic substrate; electroplating copper at first preset positions of the first metal seed layer and the second metal seed layer to obtain a copper-plated layer; second preset positions of the first metal seed layer and the second metal seed layer are etched, surface solder resists are manufactured on the upper surface and the lower surface of the ceramic substrate respectively, and solder mask layers of the ceramic substrate are obtained; wherein the second preset position is the remaining position of the first metal seed layer and the second metal seed layer except the first preset position; and manufacturing a surface metal pattern on the copper plating layer exposed between the solder mask layers, and carrying out annealing treatment on the manufactured ceramic substrate to obtain the high-heat-dissipation high-temperature co-fired ceramic substrate. The heat dissipation capability of the ceramic substrate can be improved.
本发明提供一种高散热高温共烧陶瓷基板的制备方法及陶瓷基板。该方法包括:在预处理后的陶瓷基板的上表面和下表面分别沉积金属种子,得到陶瓷基板上表面的第一金属种子层和下表面的第二金属种子层;在第一金属种子层和第二金属种子层的第一预设位置处电镀铜,得到镀铜层;对第一金属种子层和第二金属种子层的第二预设位置进行刻蚀,并在陶瓷基板的上表面和下表面分别制作表面阻焊,得到陶瓷基板的阻焊层;其中,第二预设位置为第一金属种子层和第二金属种子层的除第一预设位置外的剩余位置;在阻焊层之间露出的镀铜层上制作表面金属图形,并对制作完成的陶瓷基板进行退火处理,得到高散热高温共烧陶瓷基板。本发明能够提高陶瓷基板的散热能力。
Preparation method of high-heat-dissipation high-temperature co-fired ceramic substrate and ceramic substrate
高散热高温共烧陶瓷基板的制备方法及陶瓷基板
ZHANG HE (Autor:in) / YANG HUAN (Autor:in) / YANG ZHENTAO (Autor:in) / LIU LINJIE (Autor:in)
24.05.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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