Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of silicon nitride/tungsten high-temperature co-fired ceramic substrate
The invention relates to a preparation method of a silicon nitride/tungsten high-temperature co-fired ceramic substrate, which comprises the following steps: (1) taking silicon powder/silicon nitride powder as raw material powder, taking rare earth oxide and alkaline earth metal oxide as composite sintering aids, carrying out primary ball-milling mixing with a solvent, adding a plasticizer and a binder, carrying out secondary ball-milling, and finally carrying out vacuum defoaming to obtain a silicon nitride/tungsten high-temperature co-fired ceramic substrate; mixed slurry is obtained; (2) carrying out tape casting on the mixed slurry by adopting tape casting equipment to prepare a raw material belt; (3) taking the metal W slurry as printing conductive slurry, drawing a conductive pattern on the cast film through a screen printing machine, and drying to obtain a raw material belt printed with the conductive pattern; and (4) cutting and laminating the raw material belt printed with the conductive pattern to obtain a silicon nitride diaphragm with a required thickness, and performing vacuum debonding and air pressure sintering to obtain the silicon nitride/tungsten high-temperature co-fired ceramic.
本发明涉及一种氮化硅/钨高温共烧陶瓷基板的制备方法,包括:(1)以硅粉/氮化硅粉作为原料粉体,稀土氧化物和碱土金属氧化物作为复合烧结助剂,与溶剂进行一次球磨混合,再加入塑性剂和粘结剂进行二次球磨,最后经真空脱泡,得到混合浆料;(2)采用流延成型设备将混合浆料流延成型,制备得到生料带;(3)以金属W浆料作为印刷导电浆料,通过丝印机在流延膜上绘制导电图形,待干燥后,得到印刷有导电图形的生料带;(4)将所得印刷有导电图形的生料带经切割、叠层后得到需要厚度的氮化硅膜片,再经真空脱粘和气压烧结,得到氮化硅/钨高温共烧陶瓷。
Preparation method of silicon nitride/tungsten high-temperature co-fired ceramic substrate
The invention relates to a preparation method of a silicon nitride/tungsten high-temperature co-fired ceramic substrate, which comprises the following steps: (1) taking silicon powder/silicon nitride powder as raw material powder, taking rare earth oxide and alkaline earth metal oxide as composite sintering aids, carrying out primary ball-milling mixing with a solvent, adding a plasticizer and a binder, carrying out secondary ball-milling, and finally carrying out vacuum defoaming to obtain a silicon nitride/tungsten high-temperature co-fired ceramic substrate; mixed slurry is obtained; (2) carrying out tape casting on the mixed slurry by adopting tape casting equipment to prepare a raw material belt; (3) taking the metal W slurry as printing conductive slurry, drawing a conductive pattern on the cast film through a screen printing machine, and drying to obtain a raw material belt printed with the conductive pattern; and (4) cutting and laminating the raw material belt printed with the conductive pattern to obtain a silicon nitride diaphragm with a required thickness, and performing vacuum debonding and air pressure sintering to obtain the silicon nitride/tungsten high-temperature co-fired ceramic.
本发明涉及一种氮化硅/钨高温共烧陶瓷基板的制备方法,包括:(1)以硅粉/氮化硅粉作为原料粉体,稀土氧化物和碱土金属氧化物作为复合烧结助剂,与溶剂进行一次球磨混合,再加入塑性剂和粘结剂进行二次球磨,最后经真空脱泡,得到混合浆料;(2)采用流延成型设备将混合浆料流延成型,制备得到生料带;(3)以金属W浆料作为印刷导电浆料,通过丝印机在流延膜上绘制导电图形,待干燥后,得到印刷有导电图形的生料带;(4)将所得印刷有导电图形的生料带经切割、叠层后得到需要厚度的氮化硅膜片,再经真空脱粘和气压烧结,得到氮化硅/钨高温共烧陶瓷。
Preparation method of silicon nitride/tungsten high-temperature co-fired ceramic substrate
一种氮化硅/钨高温共烧陶瓷基板的制备方法
ZHANG JINGXIAN (Autor:in) / WANG LINGFENG (Autor:in) / DUAN YUSEN (Autor:in)
30.12.2022
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Method for metal and silicon nitride ceramic high-temperature co-fired composite substrate
Europäisches Patentamt | 2021
|Preparation method of co-fired aluminum nitride ceramic substrate
Europäisches Patentamt | 2022
|Silicon nitride ceramic slurry, silicon nitride ceramic substrate and preparation method thereof
Europäisches Patentamt | 2024
|Preparation method of high-performance silicon nitride ceramic substrate
Europäisches Patentamt | 2023
|Europäisches Patentamt | 2024
|