Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
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Iron-doped gallium oxide-based ferromagnetic ceramic thin film material and preparation method thereof
The invention provides an iron-doped gallium oxide-based ferromagnetic ceramic thin film material and a preparation method thereof, and relates to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: firstly, preparing a Ga organic precursor solution and a Fe organic precursor solution; fully mixing the Ga organic precursor solution and the Fe organic precursor solution according to a certain proportion to form a GaFe organic precursor solution; spin-coating the cleaned single crystal alumina substrate with the GaFe organic precursor solution; putting the obtained GaFe thin film into a single-temperature-zone tubular furnace; the preparation method comprises the following steps: in an air atmosphere, firstly raising the temperature of a tubular furnace to 550 DEG C at a slow rate of 2 DEG C/min, preserving heat for 1 hour, then raising the temperature to be greater than or equal to 750 DEG C at the same temperature raising rate, performing annealing treatment, and preserving heat for 1 hour, thereby preparing the GaFeO magnetic ceramic film with extremely uniform surface and strong ferromagnetism. The preparation method disclosed by the invention is low in environmental requirement, and the GaFeO magnetic ceramic film prepared by the preparation method disclosed by the invention has relatively good crystallinity and crystal orientation, and has excellent strong ferromagnetism and Curie temperature higher than 352K.
本发明提供了一种铁掺杂氧化镓基强铁磁性陶瓷薄膜材料及其制备方法，涉及磁性半导体陶瓷材料技术领域。本发明首先通过制备Ga有机前驱溶液和Fe有机前驱溶液；然后将Ga和Fe有机前驱溶液按一定的比例充分混合形成GaFe有机前驱溶液；将GaFe有机前驱溶液旋涂到清洗后的单晶氧化铝基底上；再将所得GaFe薄膜放入单温区管式炉；在空气气氛下，将管式炉温度以2℃/min的缓慢速率先升至550℃，保温1h，然后再以相同的升温速率升温至大于等于750℃进行退火处理，保温1h，由此制备出表面极为均匀的具有强铁磁性的GaFeO磁性陶瓷薄膜。本发明的制备方法对环境要求低，本发明所制备的GaFeO磁性陶瓷薄膜具有较好的结晶性和结晶取向，具有优异的强铁磁性以及高于352K的居里温度。
Iron-doped gallium oxide-based ferromagnetic ceramic thin film material and preparation method thereof
The invention provides an iron-doped gallium oxide-based ferromagnetic ceramic thin film material and a preparation method thereof, and relates to the technical field of magnetic semiconductor ceramic materials. The preparation method comprises the following steps: firstly, preparing a Ga organic precursor solution and a Fe organic precursor solution; fully mixing the Ga organic precursor solution and the Fe organic precursor solution according to a certain proportion to form a GaFe organic precursor solution; spin-coating the cleaned single crystal alumina substrate with the GaFe organic precursor solution; putting the obtained GaFe thin film into a single-temperature-zone tubular furnace; the preparation method comprises the following steps: in an air atmosphere, firstly raising the temperature of a tubular furnace to 550 DEG C at a slow rate of 2 DEG C/min, preserving heat for 1 hour, then raising the temperature to be greater than or equal to 750 DEG C at the same temperature raising rate, performing annealing treatment, and preserving heat for 1 hour, thereby preparing the GaFeO magnetic ceramic film with extremely uniform surface and strong ferromagnetism. The preparation method disclosed by the invention is low in environmental requirement, and the GaFeO magnetic ceramic film prepared by the preparation method disclosed by the invention has relatively good crystallinity and crystal orientation, and has excellent strong ferromagnetism and Curie temperature higher than 352K.
本发明提供了一种铁掺杂氧化镓基强铁磁性陶瓷薄膜材料及其制备方法，涉及磁性半导体陶瓷材料技术领域。本发明首先通过制备Ga有机前驱溶液和Fe有机前驱溶液；然后将Ga和Fe有机前驱溶液按一定的比例充分混合形成GaFe有机前驱溶液；将GaFe有机前驱溶液旋涂到清洗后的单晶氧化铝基底上；再将所得GaFe薄膜放入单温区管式炉；在空气气氛下，将管式炉温度以2℃/min的缓慢速率先升至550℃，保温1h，然后再以相同的升温速率升温至大于等于750℃进行退火处理，保温1h，由此制备出表面极为均匀的具有强铁磁性的GaFeO磁性陶瓷薄膜。本发明的制备方法对环境要求低，本发明所制备的GaFeO磁性陶瓷薄膜具有较好的结晶性和结晶取向，具有优异的强铁磁性以及高于352K的居里温度。
Iron-doped gallium oxide-based ferromagnetic ceramic thin film material and preparation method thereof
一种铁掺杂氧化镓基强铁磁性陶瓷薄膜材料及其制备方法
XIANG GANG (Autor:in) / GONG DAN (Autor:in) / ZHANG XI (Autor:in)
07.06.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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