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Sintered body, sputtering target, oxide thin film, thin film transistor, electronic device, and method for producing sintered body

KAWASHIMA EMI / ITOSE MAMI / KAIJO AKIRA / INOUE KAZUYOSHI / IWASE NOBUHIRO

The sintered body is an oxide containing an In element, a Ga element, and an Al element, and the atomic composition ratio of the In element and the Al element satisfies the following formula (1) and the following formula (2): [In]/([In] + [Ga] + [Al]) > 0.70 (1); (2) [Al]/([In] + [Ga] + [Al]) > 0.01.

一种烧结体，其为包含In元素、Ga元素及Al元素的氧化物的烧结体，所述In元素及所述Al元素的原子组成比满足下述式(1)及下述式(2)：[In]/([In]+[Ga]+[Al])＞0.70....(1)；[Al]/([In]+[Ga]+[Al])＞0.01....(2)。

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Sintered body, sputtering target, oxide thin film, thin film transistor, electronic device, and method for producing sintered body

KAWASHIMA EMI / ITOSE MAMI / KAIJO AKIRA / INOUE KAZUYOSHI / IWASE NOBUHIRO

The sintered body is an oxide containing an In element, a Ga element, and an Al element, and the atomic composition ratio of the In element and the Al element satisfies the following formula (1) and the following formula (2): [In]/([In] + [Ga] + [Al]) > 0.70 (1); (2) [Al]/([In] + [Ga] + [Al]) > 0.01.

一种烧结体，其为包含In元素、Ga元素及Al元素的氧化物的烧结体，所述In元素及所述Al元素的原子组成比满足下述式(1)及下述式(2)：[In]/([In]+[Ga]+[Al])＞0.70....(1)；[Al]/([In]+[Ga]+[Al])＞0.01....(2)。

Sintered body, sputtering target, oxide thin film, thin film transistor, electronic device, and method for producing sintered body

KAWASHIMA EMI / ITOSE MAMI / KAIJO AKIRA / INOUE KAZUYOSHI / IWASE NOBUHIRO

The sintered body is an oxide containing an In element, a Ga element, and an Al element, and the atomic composition ratio of the In element and the Al element satisfies the following formula (1) and the following formula (2): [In]/([In] + [Ga] + [Al]) > 0.70 (1); (2) [Al]/([In] + [Ga] + [Al]) > 0.01.

一种烧结体，其为包含In元素、Ga元素及Al元素的氧化物的烧结体，所述In元素及所述Al元素的原子组成比满足下述式(1)及下述式(2)：[In]/([In]+[Ga]+[Al])＞0.70....(1)；[Al]/([In]+[Ga]+[Al])＞0.01....(2)。

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Titel:

Sintered body, sputtering target, oxide thin film, thin film transistor, electronic device, and method for producing sintered body

Weitere Titelangaben:

烧结体、溅射靶、氧化物薄膜、薄膜晶体管、电子设备及烧结体的制造方法

Beteiligte:

KAWASHIMA EMI (Autor:in) / ITOSE MAMI (Autor:in) / KAIJO AKIRA (Autor:in) / INOUE KAZUYOSHI (Autor:in) / IWASE NOBUHIRO (Autor:in)

Erscheinungsdatum:

29.10.2024

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Chinesisch

Klassifikation:

IPC: C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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