Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
To provide an oxide sintered body that can form an oxide semiconductor thin film having excellent properties for use in a thin-film transistor and suppress cracks and nodule during deposition, as well as a sputtering target that has the sintered body.SOLUTION: An oxide sintered body contains: In elements, Ga elements, Sn elements, and Al elements; a GaInOcrystal; and at least one of a SnOcrystal and a (GaIn)SnOcrystal (0.10≤x≤0.50).SELECTED DRAWING: None
【課題】薄膜トランジスタに用いたときに優れた特性を有する酸化物半導体薄膜を形成でき、かつ成膜時の割れやノジュールの生成を抑制できる酸化物焼結体、および当該焼結体を有するスパッタリングターゲットの提供。【解決手段】Ｉｎ元素、Ｇａ元素、Ｓｎ元素およびＡｌ元素を含み、ＧａＩｎＯ3結晶を含み、さらにＳｎＯ2結晶または（Ｇａ1.0-ｘＩｎｘ）2ＳｎＯ5結晶（０．１０≦ｘ≦０．５０）の少なくとも一方を含むことを特徴とする、酸化物焼結体。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
To provide an oxide sintered body that can form an oxide semiconductor thin film having excellent properties for use in a thin-film transistor and suppress cracks and nodule during deposition, as well as a sputtering target that has the sintered body.SOLUTION: An oxide sintered body contains: In elements, Ga elements, Sn elements, and Al elements; a GaInOcrystal; and at least one of a SnOcrystal and a (GaIn)SnOcrystal (0.10≤x≤0.50).SELECTED DRAWING: None
【課題】薄膜トランジスタに用いたときに優れた特性を有する酸化物半導体薄膜を形成でき、かつ成膜時の割れやノジュールの生成を抑制できる酸化物焼結体、および当該焼結体を有するスパッタリングターゲットの提供。【解決手段】Ｉｎ元素、Ｇａ元素、Ｓｎ元素およびＡｌ元素を含み、ＧａＩｎＯ3結晶を含み、さらにＳｎＯ2結晶または（Ｇａ1.0-ｘＩｎｘ）2ＳｎＯ5結晶（０．１０≦ｘ≦０．５０）の少なくとも一方を含むことを特徴とする、酸化物焼結体。【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、および薄膜トランジスタ
INOUE KAZUYOSHI (Autor:in) / SHIBATA MASATOSHI (Autor:in)
23.05.2019
Patent
Elektronische Ressource
Japanisch
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