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OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
To provide an oxide sintered body that can secure strength of a target even when the target has composition obtained by adding Y(yttrium) to an indium oxide, as well as a sputtering target.SOLUTION: An oxide sintered body contains In elements, Zn elements, Sn elements, and Y elements, and has a bixbyite structure expressed by InOand a pyrochlore structure expressed by YSnO. An atomic composition ratio of the Y element satisfies the following expression (1): 0.03≤Y/(In+Sn+Zn+Y)≤0.08 (1).SELECTED DRAWING: None
【課題】酸化インジウムにY(イットリウム)を添加した組成であっても、ターゲットの強度を確保できる酸化物焼結体およびスパッタリングターゲットの提供。【解決手段】In元素、Zn元素、Sn元素およびY元素を含み、In2O3で表されるビックスバイト構造と、Y2Sn2O7で表されるパイロクロア構造を含み、Y元素の原子組成比が下記式(1)を満たす範囲であることを特徴とする酸化物焼結体。0.03≦Y/(In+Sn+Zn+Y)≦0.08 ・・・(1)【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
To provide an oxide sintered body that can secure strength of a target even when the target has composition obtained by adding Y(yttrium) to an indium oxide, as well as a sputtering target.SOLUTION: An oxide sintered body contains In elements, Zn elements, Sn elements, and Y elements, and has a bixbyite structure expressed by InOand a pyrochlore structure expressed by YSnO. An atomic composition ratio of the Y element satisfies the following expression (1): 0.03≤Y/(In+Sn+Zn+Y)≤0.08 (1).SELECTED DRAWING: None
【課題】酸化インジウムにY(イットリウム)を添加した組成であっても、ターゲットの強度を確保できる酸化物焼結体およびスパッタリングターゲットの提供。【解決手段】In元素、Zn元素、Sn元素およびY元素を含み、In2O3で表されるビックスバイト構造と、Y2Sn2O7で表されるパイロクロア構造を含み、Y元素の原子組成比が下記式(1)を満たす範囲であることを特徴とする酸化物焼結体。0.03≦Y/(In+Sn+Zn+Y)≦0.08 ・・・(1)【選択図】なし
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN-FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、および薄膜トランジスタ
INOUE KAZUYOSHI (Autor:in) / SHIBATA MASATOSHI (Autor:in)
23.05.2019
Patent
Elektronische Ressource
Japanisch
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