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Sputtering target, method for producing sputtering target, oxide semiconductor thin film, thin film semiconductor device, and method for producing thin film semiconductor device
A sputtering target comprising a sintered oxide containing an oxide of the formula InXMgYSnZ consisting of indium, magnesium and tin, in which X is from 0.32 to 0.65 (inclusive), Y is from 0.17 to 0.46 (inclusive), and Z is greater than 0 to 0.22 (inclusive) and is within the range of X + Y + Z = 1.
溅射靶，其由包含由铟、镁和锡组成的式InXMgYSnZ的氧化物的氧化物烧结体构成，上述式的X为0.32以上且0.65以下，Y为0.17以上且0.46以下，Z为大于0且0.22以下，并且在X+Y+Z＝1的范围。
Sputtering target, method for producing sputtering target, oxide semiconductor thin film, thin film semiconductor device, and method for producing thin film semiconductor device
A sputtering target comprising a sintered oxide containing an oxide of the formula InXMgYSnZ consisting of indium, magnesium and tin, in which X is from 0.32 to 0.65 (inclusive), Y is from 0.17 to 0.46 (inclusive), and Z is greater than 0 to 0.22 (inclusive) and is within the range of X + Y + Z = 1.
溅射靶，其由包含由铟、镁和锡组成的式InXMgYSnZ的氧化物的氧化物烧结体构成，上述式的X为0.32以上且0.65以下，Y为0.17以上且0.46以下，Z为大于0且0.22以下，并且在X+Y+Z＝1的范围。
Sputtering target, method for producing sputtering target, oxide semiconductor thin film, thin film semiconductor device, and method for producing thin film semiconductor device
溅射靶、溅射靶的制造方法、氧化物半导体薄膜、薄膜半导体装置及其制造方法
TANINO KENTA (Autor:in) / KOBAYASHI MOTOSHI (Autor:in) / HANNA TAKU (Autor:in) / MATSUMOTO KOICHI (Autor:in)
08.11.2024
Patent
Elektronische Ressource
Chinesisch
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