Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation process of ultra-high-density ITO (Indium Tin Oxide) target material
The invention relates to the technical field of target materials, in particular to a preparation process of an ultra-high-density ITO target material. The preparation process of the ultra-high-density ITO target material comprises the following steps of raw material selection, primary sanding, secondary sanding, mixed sanding, granulation, cold pressing and sintering. The raw materials are indium oxide powder and tin oxide powder. According to the preparation process of the ultra-high-density ITO target material, the finally obtained target material has ultra-high density and relatively low resistivity, and can be well used as a raw material for measuring and controlling sputtering to prepare a thin film. And the method is simple in steps and suitable for large-scale mass production.
本发明涉及靶材技术领域，具体涉及一种超高密度的ITO靶材制备工艺。本发明的超高密度的ITO靶材制备工艺，包括以下步骤：原材料选择、初步砂磨、二次砂磨、混合砂磨、造粒、冷压、烧结；所述原材料为氧化铟粉末和氧化锡粉末。本发明的超高密度的ITO靶材制备工艺，最终得到的靶材具有超高的密度以及较低的电阻率，能够很好的作为测控溅射制备薄膜的原料。且步骤简单，适合大规模量产。
Preparation process of ultra-high-density ITO (Indium Tin Oxide) target material
The invention relates to the technical field of target materials, in particular to a preparation process of an ultra-high-density ITO target material. The preparation process of the ultra-high-density ITO target material comprises the following steps of raw material selection, primary sanding, secondary sanding, mixed sanding, granulation, cold pressing and sintering. The raw materials are indium oxide powder and tin oxide powder. According to the preparation process of the ultra-high-density ITO target material, the finally obtained target material has ultra-high density and relatively low resistivity, and can be well used as a raw material for measuring and controlling sputtering to prepare a thin film. And the method is simple in steps and suitable for large-scale mass production.
本发明涉及靶材技术领域，具体涉及一种超高密度的ITO靶材制备工艺。本发明的超高密度的ITO靶材制备工艺，包括以下步骤：原材料选择、初步砂磨、二次砂磨、混合砂磨、造粒、冷压、烧结；所述原材料为氧化铟粉末和氧化锡粉末。本发明的超高密度的ITO靶材制备工艺，最终得到的靶材具有超高的密度以及较低的电阻率，能够很好的作为测控溅射制备薄膜的原料。且步骤简单，适合大规模量产。
Preparation process of ultra-high-density ITO (Indium Tin Oxide) target material
一种超高密度的ITO靶材制备工艺
ZENG DUNFENG (Autor:in) / ZHANG BING (Autor:in) / WANG ZHIQIANG (Autor:in) / ZENG TAN (Autor:in) / CHEN GUANGYUAN (Autor:in)
19.11.2024
Patent
Elektronische Ressource
Chinesisch
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