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    FERROELECTRIC THIN FILM, METHOD FOR PRODUCING FERROELECTRIC THIN FILM, METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT

    Neue Suche nach: MAWATARI KENJI

    In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.

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    FERROELECTRIC THIN FILM, METHOD FOR PRODUCING FERROELECTRIC THIN FILM, METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT

    Neue Suche nach: MAWATARI KENJI

    In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.

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    FERROELECTRIC THIN FILM, METHOD FOR PRODUCING FERROELECTRIC THIN FILM, METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT

    Neue Suche nach: MAWATARI KENJI

    In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.

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    Titel:

    FERROELECTRIC THIN FILM, METHOD FOR PRODUCING FERROELECTRIC THIN FILM, METHOD FOR PRODUCING PIEZOELECTRIC ELEMENT

    Weitere Titelangaben:

    FERROELEKTRISCHE DÜNNSCHICHT, VERFAHREN ZUR HERSTELLUNG DER FERROELEKTRISCHEN DÜNNSCHICHT UND VERFAHREN ZUR HERSTELLUNG EINES PIEZOELEKTRISCHEN ELEMENTS
    FILM MINCE FERROÉLECTRIQUE, SON PROCÉDÉ DE FABRICATION, ET PROCÉDÉ DE PRODUCTION D'UN ÉLÉMENT PIÉZOÉLECTRIQUE

    Beteiligte:

    MAWATARI KENJI (Autor:in)

    Erscheinungsdatum:

    13.07.2016

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B41J TYPEWRITERS , Schreibmaschinen / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL

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