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SINTERED OXIDE AND TRANSPARENT CONDUCTIVE OXIDE FILM
The purpose of the present invention is to provide a sintered oxide capable of realizing a sufficiently low resistivity even in a production process for producing a film or a device wherein the maximum temperature is suppressed to be at a low temperature, and a transparent conductive oxide film obtainable therefrom. A sintered oxide having indium, zirconium, yttrium, hafnium and oxygen as constituent elements. The sintered oxide is characterized in that when the indium, zirconium, yttrium and hafnium are represented by In, Zr, Y and Hf, respectively, in atomic ratios, Zr/(In+Zr+Y+Hf) is from 0.1 to 3.0 at%, Y/(In+Zr+Y+Hf) is from 0.005 to 0.5 at%, and Hf/(In+Zr+Y+Hf) is from 0.0002 to 0.15 at%.
SINTERED OXIDE AND TRANSPARENT CONDUCTIVE OXIDE FILM
The purpose of the present invention is to provide a sintered oxide capable of realizing a sufficiently low resistivity even in a production process for producing a film or a device wherein the maximum temperature is suppressed to be at a low temperature, and a transparent conductive oxide film obtainable therefrom. A sintered oxide having indium, zirconium, yttrium, hafnium and oxygen as constituent elements. The sintered oxide is characterized in that when the indium, zirconium, yttrium and hafnium are represented by In, Zr, Y and Hf, respectively, in atomic ratios, Zr/(In+Zr+Y+Hf) is from 0.1 to 3.0 at%, Y/(In+Zr+Y+Hf) is from 0.005 to 0.5 at%, and Hf/(In+Zr+Y+Hf) is from 0.0002 to 0.15 at%.
SINTERED OXIDE AND TRANSPARENT CONDUCTIVE OXIDE FILM
GESINTERTES OXID UND TRANSPARENTER LEITFÄHIGER OXIDFILM
OXYDE FRITTÉ ET FILM D'OXYDE CONDUCTEUR TRANSPARENT
KURAMOCHI HIDETO (Autor:in) / TAMANO KIMIAKI (Autor:in) / AKIIKE RYO (Autor:in)
18.01.2017
Patent
Elektronische Ressource
Englisch
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