Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON CARBIDE SINTERED COMPACT, METHOD FOR PRODUCING THE SILICON CARBIDE SINTERED COMPACT, FIRING FIXTURE, FIRING FURNACE, AND MOLTEN METAL HOLDING FURNACE
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact excellent in thermal impact resistance, strength, high temperature strength and oxidation resistance, a method for producing the silicon carbide sintered compact, a firing fixture, a firing furnace, and a molten metal holding furnace.SOLUTION: Provided is a silicon carbide sintered compact, where, in the particle size distribution of silicon carbide, the value of the 1/3 of the maximum particle diameter D99 of the silicon carbide is defined as the standard particle diameter Dp, further, the range in which the particle diameter is O mm to Dp is defined as the first range, the range in which the particle diameter is above Dp to a value double the Dp or lower is defined as the second range, and the range in which the particle diameter is a value higher than the double the Dp to D99 is defined as the third range, the particles of 10 to 40% are present in the first range, also, the particles of 10 to 40% are present in the third range, the particles of 10 to 40% are present in the first range, the particles of 10 to 40% are present in the third range, and also, the total of the particles present in the first range and the third range is 34% or higher.SELECTED DRAWING: Figure 5A
【課題】耐熱衝撃性、強度、高温強度および耐酸化性に優れた炭化珪素焼結体、炭化珪素焼結体の製造方法、焼成治具、焼成炉および金属溶湯保持炉を提供する。【解決手段】実施形態の一態様に係る炭化珪素焼結体は、炭化珪素の粒度分布において、炭化珪素の最大粒径Ｄ９９の１／３の値を基準粒径Ｄｐとするとともに、粒径が０ｍｍ以上でＤｐ以下の範囲を第１範囲、粒径がＤｐより大きくＤｐの２倍の値以下の範囲を第２範囲、粒径がＤｐの２倍の値より大きくＤ９９以下の範囲を第３範囲としたとき、第１範囲に１０％〜４０％の粒子が存在し、かつ、第３範囲に１０％〜４０％の粒子が存在し、かつ、第１範囲および第３範囲に存在する粒子の合計が３４％以上である。【選択図】図５Ａ
SILICON CARBIDE SINTERED COMPACT, METHOD FOR PRODUCING THE SILICON CARBIDE SINTERED COMPACT, FIRING FIXTURE, FIRING FURNACE, AND MOLTEN METAL HOLDING FURNACE
PROBLEM TO BE SOLVED: To provide a silicon carbide sintered compact excellent in thermal impact resistance, strength, high temperature strength and oxidation resistance, a method for producing the silicon carbide sintered compact, a firing fixture, a firing furnace, and a molten metal holding furnace.SOLUTION: Provided is a silicon carbide sintered compact, where, in the particle size distribution of silicon carbide, the value of the 1/3 of the maximum particle diameter D99 of the silicon carbide is defined as the standard particle diameter Dp, further, the range in which the particle diameter is O mm to Dp is defined as the first range, the range in which the particle diameter is above Dp to a value double the Dp or lower is defined as the second range, and the range in which the particle diameter is a value higher than the double the Dp to D99 is defined as the third range, the particles of 10 to 40% are present in the first range, also, the particles of 10 to 40% are present in the third range, the particles of 10 to 40% are present in the first range, the particles of 10 to 40% are present in the third range, and also, the total of the particles present in the first range and the third range is 34% or higher.SELECTED DRAWING: Figure 5A
【課題】耐熱衝撃性、強度、高温強度および耐酸化性に優れた炭化珪素焼結体、炭化珪素焼結体の製造方法、焼成治具、焼成炉および金属溶湯保持炉を提供する。【解決手段】実施形態の一態様に係る炭化珪素焼結体は、炭化珪素の粒度分布において、炭化珪素の最大粒径Ｄ９９の１／３の値を基準粒径Ｄｐとするとともに、粒径が０ｍｍ以上でＤｐ以下の範囲を第１範囲、粒径がＤｐより大きくＤｐの２倍の値以下の範囲を第２範囲、粒径がＤｐの２倍の値より大きくＤ９９以下の範囲を第３範囲としたとき、第１範囲に１０％〜４０％の粒子が存在し、かつ、第３範囲に１０％〜４０％の粒子が存在し、かつ、第１範囲および第３範囲に存在する粒子の合計が３４％以上である。【選択図】図５Ａ
SILICON CARBIDE SINTERED COMPACT, METHOD FOR PRODUCING THE SILICON CARBIDE SINTERED COMPACT, FIRING FIXTURE, FIRING FURNACE, AND MOLTEN METAL HOLDING FURNACE
炭化珪素焼結体、炭化珪素焼結体の製造方法、焼成治具、焼成炉および金属溶湯保持炉
OKAMOTO MASARU (Autor:in) / KAJINO HITOSHI (Autor:in)
23.06.2016
Patent
Elektronische Ressource
Japanisch
IPC:
C04B
Kalk
,
LIME
/
F27D
Einzelheiten oder Zubehör für Industrieöfen, Schachtöfen, Brennöfen oder Retorten, soweit sie nicht auf eine Ofenart eingeschränkt sind
,
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
| Europäisches Patentamt | 2024
METHOD FOR PRODUCING SILICON CARBIDE SINTERED COMPACT
| Europäisches Patentamt | 2015
| Europäisches Patentamt | 2015