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POLYCRYSTALLINE SILICON CARBIDE SINTERED COMPACT

HAMAME KOJI / YAMAHARA KEIJI / KATAYAMA TOSHIAKI / MIYAMOTO YUKIHIRO

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon carbide sintered compact having a high heat conductivity and high electric resistivity.SOLUTION: The present invention provides a polycrystalline silicon carbide sintered compact that is reduced in nitrogen concentration and boron concentration, specifically, a polycrystalline silicon carbide sintered compact having a nitrogen concentration of 85 ppm or less and a boron concentration of 200 ppm or less.

【課題】高い熱伝導を有し、かつ、高い電気抵抗率を有する多結晶炭化ケイ素焼結体を提供する。【解決手段】窒素濃度、ホウ素濃度が低減された多結晶炭化ケイ素焼結体、より具体的には、窒素濃度が８５ｐｐｍ以下であり、ホウ素濃度が２００ｐｐｍ以下である多結晶炭化ケイ素焼結体により、課題を解決する。【選択図】なし

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POLYCRYSTALLINE SILICON CARBIDE SINTERED COMPACT

HAMAME KOJI / YAMAHARA KEIJI / KATAYAMA TOSHIAKI / MIYAMOTO YUKIHIRO

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon carbide sintered compact having a high heat conductivity and high electric resistivity.SOLUTION: The present invention provides a polycrystalline silicon carbide sintered compact that is reduced in nitrogen concentration and boron concentration, specifically, a polycrystalline silicon carbide sintered compact having a nitrogen concentration of 85 ppm or less and a boron concentration of 200 ppm or less.

【課題】高い熱伝導を有し、かつ、高い電気抵抗率を有する多結晶炭化ケイ素焼結体を提供する。【解決手段】窒素濃度、ホウ素濃度が低減された多結晶炭化ケイ素焼結体、より具体的には、窒素濃度が８５ｐｐｍ以下であり、ホウ素濃度が２００ｐｐｍ以下である多結晶炭化ケイ素焼結体により、課題を解決する。【選択図】なし

POLYCRYSTALLINE SILICON CARBIDE SINTERED COMPACT

HAMAME KOJI / YAMAHARA KEIJI / KATAYAMA TOSHIAKI / MIYAMOTO YUKIHIRO

PROBLEM TO BE SOLVED: To provide a polycrystalline silicon carbide sintered compact having a high heat conductivity and high electric resistivity.SOLUTION: The present invention provides a polycrystalline silicon carbide sintered compact that is reduced in nitrogen concentration and boron concentration, specifically, a polycrystalline silicon carbide sintered compact having a nitrogen concentration of 85 ppm or less and a boron concentration of 200 ppm or less.

【課題】高い熱伝導を有し、かつ、高い電気抵抗率を有する多結晶炭化ケイ素焼結体を提供する。【解決手段】窒素濃度、ホウ素濃度が低減された多結晶炭化ケイ素焼結体、より具体的には、窒素濃度が８５ｐｐｍ以下であり、ホウ素濃度が２００ｐｐｍ以下である多結晶炭化ケイ素焼結体により、課題を解決する。【選択図】なし

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Titel:

POLYCRYSTALLINE SILICON CARBIDE SINTERED COMPACT

Weitere Titelangaben:

多結晶炭化ケイ素焼結体

Beteiligte:

HAMAME KOJI (Autor:in) / YAMAHARA KEIJI (Autor:in) / KATAYAMA TOSHIAKI (Autor:in) / MIYAMOTO YUKIHIRO (Autor:in)

Erscheinungsdatum:

21.01.2016

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Japanisch

Klassifikation:

IPC: C04B Kalk , LIME / C01B NON-METALLIC ELEMENTS , Nichtmetallische Elemente

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