Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED COMPACT, PRODUCTION METHOD THEREFOR AND RAW MATERIAL POWDER FOR PRODUCING OXIDE SINTERED COMPACT
PROBLEM TO BE SOLVED: To provide a method of producing, with high density, an IGZO target for use as a sputtering target that is required for the deposition of a transparent semiconductor IGZO film based on the sputtering method, an IGZO sintered compact that is obtained by the production method, and an oxide raw material powder having a low impurity concentration that is suitable as a raw material for producing such an IGZO sintered compact.SOLUTION: The IGZO sintered compact is provided that is made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [in the formula, x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less, wherein the volatile impurities are a compound containing one or more compounds selected from a chlorine compound, a nitric acid compound, a sulfated compound, and an ammonium compound.SELECTED DRAWING: None
【課題】透明半導体ＩＧＺＯ膜のスパッタ法での成膜に必要なスパッタリングターゲットとして使用されるＩＧＺＯターゲットを高密度で製造する方法、該製造方法で得られるＩＧＺＯ焼結体及び該ＩＧＺＯ焼結体製造用原料として適切な、不純物濃度が低い酸化物原料粉の提供。【解決手段】インジウム（Ｉｎ）、ガリウム（Ｇａ）、亜鉛（Ｚｎ）及び酸素（Ｏ）からなり、式ＩｎｘＧａｙＺｎｚＯａ［式中、ｘ／（ｘ＋ｙ）が０．２〜０．８、ｚ／（ｘ＋ｙ＋ｚ）が０．１〜０．５、ａ＝（３／２）ｘ＋（３／２）ｙ＋ｚ］で表され、該酸化物焼結体に含有される揮発性不純物である、塩素化合物、硝酸化合物、硫酸化合物、アンモニア化合物の内の１以上を含有する化合物の濃度が２０ｐｐｍ以下であるＩＧＺＯ焼結体。【選択図】なし
OXIDE SINTERED COMPACT, PRODUCTION METHOD THEREFOR AND RAW MATERIAL POWDER FOR PRODUCING OXIDE SINTERED COMPACT
PROBLEM TO BE SOLVED: To provide a method of producing, with high density, an IGZO target for use as a sputtering target that is required for the deposition of a transparent semiconductor IGZO film based on the sputtering method, an IGZO sintered compact that is obtained by the production method, and an oxide raw material powder having a low impurity concentration that is suitable as a raw material for producing such an IGZO sintered compact.SOLUTION: The IGZO sintered compact is provided that is made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [in the formula, x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less, wherein the volatile impurities are a compound containing one or more compounds selected from a chlorine compound, a nitric acid compound, a sulfated compound, and an ammonium compound.SELECTED DRAWING: None
【課題】透明半導体ＩＧＺＯ膜のスパッタ法での成膜に必要なスパッタリングターゲットとして使用されるＩＧＺＯターゲットを高密度で製造する方法、該製造方法で得られるＩＧＺＯ焼結体及び該ＩＧＺＯ焼結体製造用原料として適切な、不純物濃度が低い酸化物原料粉の提供。【解決手段】インジウム（Ｉｎ）、ガリウム（Ｇａ）、亜鉛（Ｚｎ）及び酸素（Ｏ）からなり、式ＩｎｘＧａｙＺｎｚＯａ［式中、ｘ／（ｘ＋ｙ）が０．２〜０．８、ｚ／（ｘ＋ｙ＋ｚ）が０．１〜０．５、ａ＝（３／２）ｘ＋（３／２）ｙ＋ｚ］で表され、該酸化物焼結体に含有される揮発性不純物である、塩素化合物、硝酸化合物、硫酸化合物、アンモニア化合物の内の１以上を含有する化合物の濃度が２０ｐｐｍ以下であるＩＧＺＯ焼結体。【選択図】なし
OXIDE SINTERED COMPACT, PRODUCTION METHOD THEREFOR AND RAW MATERIAL POWDER FOR PRODUCING OXIDE SINTERED COMPACT
酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末
UBUSAWA MASAKATSU (Autor:in) / YAHAGI MASATAKA (Autor:in) / OSADA KOZO (Autor:in) / KAKENO TAKASHI (Autor:in) / TAKAMI HIDEO (Autor:in)
22.12.2016
Patent
Elektronische Ressource
Japanisch
IPC:
C04B
Kalk
,
LIME
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