Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
PROBLEM TO BE SOLVED: To provide a graphite crucible for single crystal growth, capable of holding a quartz crucible for pulling a silicon single crystal by the Czochralski method, easily discharging a formed reactant gas to the outside without staying between the graphite crucible and the quartz crucible and especially, markedly suppressing erosion in the division line of the graphite crucible.SOLUTION: In a graphite crucible 3 for single crystal growth, a plurality of projections 3a contacting the outer surface of a quartz crucible 4 are formed in the inner surface of the graphite crucible 3, and gas flow paths 10 having gas flowing between the plurality of projections 3a are formed between the inner surface of the graphite crucible 3 and the outer surface of the quartz crucible 4. The total area of the bottoms of the plurality of projections 3a formed in the inner surface of the graphite crucible 3 is 40-75% of the inner area of the graphite crucible 3, and the average bottom area of the plurality of projections 3a formed in the inner surface of the graphite crucible 3 is 20-300 mm.SELECTED DRAWING: Figure 3
【課題】チョクラルスキー法によってシリコン単結晶が引上げられる石英ルツボを保持する単結晶育成用の黒鉛ルツボにおいて、生成された反応ガスが黒鉛ルツボと石英ルツボとの間に滞留することがなく、容易に外部に排出し、特に黒鉛ルツボの分割線における侵食を格段に抑制することが可能な単結晶育成用の黒鉛ルツボの提供。【解決手段】黒鉛ルツボ３内面には、石英ルツボ４の外面に当接する複数の突起３ａが形成され、黒鉛ルツボ３内面と石英ルツボ４外面との間には、複数の突起３ａの間をガスが流れるガス流路１０が形成されており、黒鉛ルツボ３内面に形成された複数の突起３ａの底面の総面積は、黒鉛ルツボ３内面積の４０〜７５％であり、且つ、黒鉛ルツボ３内面に形成された複数の突起３ａの平均底面積は、２０〜３００ｍｍ２である単結晶育成用黒鉛ルツボ３。【選択図】図３
PROBLEM TO BE SOLVED: To provide a graphite crucible for single crystal growth, capable of holding a quartz crucible for pulling a silicon single crystal by the Czochralski method, easily discharging a formed reactant gas to the outside without staying between the graphite crucible and the quartz crucible and especially, markedly suppressing erosion in the division line of the graphite crucible.SOLUTION: In a graphite crucible 3 for single crystal growth, a plurality of projections 3a contacting the outer surface of a quartz crucible 4 are formed in the inner surface of the graphite crucible 3, and gas flow paths 10 having gas flowing between the plurality of projections 3a are formed between the inner surface of the graphite crucible 3 and the outer surface of the quartz crucible 4. The total area of the bottoms of the plurality of projections 3a formed in the inner surface of the graphite crucible 3 is 40-75% of the inner area of the graphite crucible 3, and the average bottom area of the plurality of projections 3a formed in the inner surface of the graphite crucible 3 is 20-300 mm.SELECTED DRAWING: Figure 3
【課題】チョクラルスキー法によってシリコン単結晶が引上げられる石英ルツボを保持する単結晶育成用の黒鉛ルツボにおいて、生成された反応ガスが黒鉛ルツボと石英ルツボとの間に滞留することがなく、容易に外部に排出し、特に黒鉛ルツボの分割線における侵食を格段に抑制することが可能な単結晶育成用の黒鉛ルツボの提供。【解決手段】黒鉛ルツボ３内面には、石英ルツボ４の外面に当接する複数の突起３ａが形成され、黒鉛ルツボ３内面と石英ルツボ４外面との間には、複数の突起３ａの間をガスが流れるガス流路１０が形成されており、黒鉛ルツボ３内面に形成された複数の突起３ａの底面の総面積は、黒鉛ルツボ３内面積の４０〜７５％であり、且つ、黒鉛ルツボ３内面に形成された複数の突起３ａの平均底面積は、２０〜３００ｍｍ２である単結晶育成用黒鉛ルツボ３。【選択図】図３
GRAPHITE CRUCIBLE FOR SINGLE CRYSTAL GROWTH
単結晶育成用の黒鉛ルツボ
KATO REI (Autor:in)
01.06.2017
Patent
Elektronische Ressource
Japanisch
| Europäisches Patentamt | 2017
Europäisches Patentamt | 2017
Europäisches Patentamt | 2018