Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
CERAMIC COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To improve position detection accuracy of a copper plate and positioning accuracy of a semiconductor chip on the basis of the position detection accuracy after improving TCT (Thermal Cycle Test) characteristics including characteristics under high temperature environment of 170°C or more.SOLUTION: A ceramic copper circuit board comprising a ceramic substrate which is composed of a silicon nitride substrate having three-point bending strength of 600 MPa or more and has a first surface and a second surface, and a first copper plate (second copper plate) bonded to the first surface (second surface) of the ceramic substrate via a first bonding layer (second bonding layer) which contains Ag, Cu, Sn or In and Ti, and in which the content of Sn or In is 1 mass% or more and 15 mass% or less. (C/D) is within a range of not less than 0.2 and not more than 0.6. Length F is not less than 10 μm and not more than 100 μm. Protruding length E is within a range of not less than 10 μm and not more than 150 μm. Bond strength of the first and second copper plates is equal to or higher than 16 kN/m.SELECTED DRAWING: Figure 1
【課題】１７０℃以上の高温環境下を含むＴＣＴ特性を向上させた上で、銅板の位置検出精度とそれに基づく半導体チップの位置決め精度を高める。【解決手段】セラミックス銅回路基板は、６００ＭＰａ以上の３点曲げ強度を有する窒化珪素基板からなり且つ第１の面と第２の面とを有するセラミックス基板と、Ａｇと、Ｃｕと、ＳｎまたはＩｎと、Ｔｉと、を含有し且つＳｎまたはＩｎの含有量が１質量％以上１５質量％以下である第１の接合層（第２の接合層）を介して、セラミックス基板の第１の面（第２の面）に接合された第１の銅板（第２の銅板）と、を具備する。（Ｃ／Ｄ）は０．２以上０．６以下の範囲である。長さＦは１０μｍ以上１００μｍ以下である。はみ出し長さＥは１０μｍ以上１５０μｍ以下の範囲である。第１、２の銅板の接合強度は１６ｋＮ／ｍ以上である。【選択図】図１
CERAMIC COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To improve position detection accuracy of a copper plate and positioning accuracy of a semiconductor chip on the basis of the position detection accuracy after improving TCT (Thermal Cycle Test) characteristics including characteristics under high temperature environment of 170°C or more.SOLUTION: A ceramic copper circuit board comprising a ceramic substrate which is composed of a silicon nitride substrate having three-point bending strength of 600 MPa or more and has a first surface and a second surface, and a first copper plate (second copper plate) bonded to the first surface (second surface) of the ceramic substrate via a first bonding layer (second bonding layer) which contains Ag, Cu, Sn or In and Ti, and in which the content of Sn or In is 1 mass% or more and 15 mass% or less. (C/D) is within a range of not less than 0.2 and not more than 0.6. Length F is not less than 10 μm and not more than 100 μm. Protruding length E is within a range of not less than 10 μm and not more than 150 μm. Bond strength of the first and second copper plates is equal to or higher than 16 kN/m.SELECTED DRAWING: Figure 1
【課題】１７０℃以上の高温環境下を含むＴＣＴ特性を向上させた上で、銅板の位置検出精度とそれに基づく半導体チップの位置決め精度を高める。【解決手段】セラミックス銅回路基板は、６００ＭＰａ以上の３点曲げ強度を有する窒化珪素基板からなり且つ第１の面と第２の面とを有するセラミックス基板と、Ａｇと、Ｃｕと、ＳｎまたはＩｎと、Ｔｉと、を含有し且つＳｎまたはＩｎの含有量が１質量％以上１５質量％以下である第１の接合層（第２の接合層）を介して、セラミックス基板の第１の面（第２の面）に接合された第１の銅板（第２の銅板）と、を具備する。（Ｃ／Ｄ）は０．２以上０．６以下の範囲である。長さＦは１０μｍ以上１００μｍ以下である。はみ出し長さＥは１０μｍ以上１５０μｍ以下の範囲である。第１、２の銅板の接合強度は１６ｋＮ／ｍ以上である。【選択図】図１
CERAMIC COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE
セラミックス銅回路基板および半導体装置
YANO KEIICHI (Autor:in) / KATO HIROMASA (Autor:in) / MIYASHITA KIMIYA (Autor:in) / NABA TAKAYUKI (Autor:in)
27.07.2017
Patent
Elektronische Ressource
Japanisch
Ceramic/copper circuit board and semiconductor device
| Europäisches Patentamt | 2016
JOINED BODY, CERAMIC-COPPER CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
| Europäisches Patentamt | 2024
BONDED BODY, CERAMIC-COPPER CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
| Europäisches Patentamt | 2023
CERAMIC COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE EMPLOYING SAME
Europäisches Patentamt | 2016
JOINED BODY, CERAMIC-COPPER CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
| Europäisches Patentamt | 2022