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    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS MEMBER

    Neue Suche nach: UEDA KAZUHIRO
    Neue Suche nach: IKENAGA KAZUYUKI
    Neue Suche nach: TAMURA SATOYUKI
    Neue Suche nach: SUMIYA MASAHIRO

    To provide a plasma processing apparatus or a processing chamber inner member in which the generation of particles is reduced and the processing yield is improved.SOLUTION: A plasma processing apparatus includes a processing chamber disposed inside a vacuum vessel and in which plasma is formed, and a member constituting an inner wall surface of the processing chamber, which is a member disposed on the surface exposed to the plasma and having a coating film formed by spraying yttrium fluoride or a material containing the same, and the ratio of the yttrium fluoride constituting the film or the material containing the same to the entire tetragonal crystal is 60% or more.SELECTED DRAWING: Figure 1

    【課題】パーティクルの発生を低減して処理の歩留まりを向上させたプラズマ処理装置またはその処理室内部部材を提供する。【解決手段】真空容器内部に配置されその内部でプラズマが形成される処理室と、この処理室の内壁表面を構成する部材であって前記プラズマに曝される表面に配置されフッ化イットリウム又はこれを含む材料が溶射されて形成された皮膜を有した部材とを備え、前記皮膜を構成するフッ化イットリウムまたはこれを含む材料の直方晶の結晶の全体に対する比率が６０％以上であるプラズマ処理装置。【選択図】 図１

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    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS MEMBER

    Neue Suche nach: UEDA KAZUHIRO
    Neue Suche nach: IKENAGA KAZUYUKI
    Neue Suche nach: TAMURA SATOYUKI
    Neue Suche nach: SUMIYA MASAHIRO

    To provide a plasma processing apparatus or a processing chamber inner member in which the generation of particles is reduced and the processing yield is improved.SOLUTION: A plasma processing apparatus includes a processing chamber disposed inside a vacuum vessel and in which plasma is formed, and a member constituting an inner wall surface of the processing chamber, which is a member disposed on the surface exposed to the plasma and having a coating film formed by spraying yttrium fluoride or a material containing the same, and the ratio of the yttrium fluoride constituting the film or the material containing the same to the entire tetragonal crystal is 60% or more.SELECTED DRAWING: Figure 1

    【課題】パーティクルの発生を低減して処理の歩留まりを向上させたプラズマ処理装置またはその処理室内部部材を提供する。【解決手段】真空容器内部に配置されその内部でプラズマが形成される処理室と、この処理室の内壁表面を構成する部材であって前記プラズマに曝される表面に配置されフッ化イットリウム又はこれを含む材料が溶射されて形成された皮膜を有した部材とを備え、前記皮膜を構成するフッ化イットリウムまたはこれを含む材料の直方晶の結晶の全体に対する比率が６０％以上であるプラズマ処理装置。【選択図】 図１

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    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS MEMBER

    Neue Suche nach: UEDA KAZUHIRO
    Neue Suche nach: IKENAGA KAZUYUKI
    Neue Suche nach: TAMURA SATOYUKI
    Neue Suche nach: SUMIYA MASAHIRO

    To provide a plasma processing apparatus or a processing chamber inner member in which the generation of particles is reduced and the processing yield is improved.SOLUTION: A plasma processing apparatus includes a processing chamber disposed inside a vacuum vessel and in which plasma is formed, and a member constituting an inner wall surface of the processing chamber, which is a member disposed on the surface exposed to the plasma and having a coating film formed by spraying yttrium fluoride or a material containing the same, and the ratio of the yttrium fluoride constituting the film or the material containing the same to the entire tetragonal crystal is 60% or more.SELECTED DRAWING: Figure 1

    【課題】パーティクルの発生を低減して処理の歩留まりを向上させたプラズマ処理装置またはその処理室内部部材を提供する。【解決手段】真空容器内部に配置されその内部でプラズマが形成される処理室と、この処理室の内壁表面を構成する部材であって前記プラズマに曝される表面に配置されフッ化イットリウム又はこれを含む材料が溶射されて形成された皮膜を有した部材とを備え、前記皮膜を構成するフッ化イットリウムまたはこれを含む材料の直方晶の結晶の全体に対する比率が６０％以上であるプラズマ処理装置。【選択図】 図１

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    Titel:

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS MEMBER

    Weitere Titelangaben:

    プラズマ処理装置およびプラズマ処理装置用部材

    Beteiligte:

    UEDA KAZUHIRO (Autor:in) / IKENAGA KAZUYUKI (Autor:in) / TAMURA SATOYUKI (Autor:in) / SUMIYA MASAHIRO (Autor:in)

    Erscheinungsdatum:

    31.10.2019

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Japanisch

    Klassifikation:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H05H Plasmatechnik , PLASMA TECHNIQUE

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