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SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD
To provide a silicon nitride substrate hardly generating color shading, an evaluation method, an evaluation device and an evaluation system of a silicon nitride substrate.SOLUTION: A silicon nitride substrate includes a first face and a second face on an opposite side of the first face. A value of an average half-value width Cave measured by a measurement method below at a measurement surface being one of the first face and the second face is larger than 0 cm-1 and smaller than 5.32 cm-1. The measurement method of an average half-value width Cave: Set one central part on the measurement surface and four marginal parts as measurement points. Measure a Raman spectrum at each of the measurement points. At each of the Raman spectrum thus measured, calculate a half-value width C of a spectral peak having a maximum strength within a range of 850 cm-1 to 875 cm-1. Set an average value of the calculated half-value widths C as an average half-value width Cave.SELECTED DRAWING: Figure 7
【課題】色むらが生じ難い窒化珪素基板、窒化珪素基板の評価方法、評価装置、及び評価システムを提供すること。【解決手段】第１面と、前記第１面とは反対側の第２面とを有する窒化珪素基板である。前記第１面と前記第２面とのうちの一方の面である測定面において以下の測定方法で測定された平均半値幅Ｃaveの値が０ｃｍ－１より大きく５．３２ｃｍ－１より小さい。平均半値幅Ｃaveの測定方法：前記測定面の中央部１点と縁部４点とを測定点とする。前記測定点のそれぞれでラマンスペクトルを測定する。測定したそれぞれの前記ラマンスペクトルにおいて、８５０ｃｍ－１以上８７５ｃｍ－１以下の範囲内で最大強度をとるスペクトルピークの半値幅Ｃを算出する。算出した前記半値幅Ｃの平均値を平均半値幅Ｃaveとする。【選択図】図７
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD
To provide a silicon nitride substrate hardly generating color shading, an evaluation method, an evaluation device and an evaluation system of a silicon nitride substrate.SOLUTION: A silicon nitride substrate includes a first face and a second face on an opposite side of the first face. A value of an average half-value width Cave measured by a measurement method below at a measurement surface being one of the first face and the second face is larger than 0 cm-1 and smaller than 5.32 cm-1. The measurement method of an average half-value width Cave: Set one central part on the measurement surface and four marginal parts as measurement points. Measure a Raman spectrum at each of the measurement points. At each of the Raman spectrum thus measured, calculate a half-value width C of a spectral peak having a maximum strength within a range of 850 cm-1 to 875 cm-1. Set an average value of the calculated half-value widths C as an average half-value width Cave.SELECTED DRAWING: Figure 7
【課題】色むらが生じ難い窒化珪素基板、窒化珪素基板の評価方法、評価装置、及び評価システムを提供すること。【解決手段】第１面と、前記第１面とは反対側の第２面とを有する窒化珪素基板である。前記第１面と前記第２面とのうちの一方の面である測定面において以下の測定方法で測定された平均半値幅Ｃaveの値が０ｃｍ－１より大きく５．３２ｃｍ－１より小さい。平均半値幅Ｃaveの測定方法：前記測定面の中央部１点と縁部４点とを測定点とする。前記測定点のそれぞれでラマンスペクトルを測定する。測定したそれぞれの前記ラマンスペクトルにおいて、８５０ｃｍ－１以上８７５ｃｍ－１以下の範囲内で最大強度をとるスペクトルピークの半値幅Ｃを算出する。算出した前記半値幅Ｃの平均値を平均半値幅Ｃaveとする。【選択図】図７
SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD
窒化珪素基板、及び窒化珪素回路基板
SUENAGA KAZUFUMI (Autor:in) / FUKUMOTO REI (Autor:in) / KAGA YOICHIRO (Autor:in)
06.09.2023
Patent
Elektronische Ressource
Japanisch
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