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Silicon nitride substrate and silicon nitride circuit board
In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
Silicon nitride substrate and silicon nitride circuit board
In a silicon nitride substrate including a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, a plate thickness of the silicon nitride substrate is 0.4 mm or les, and a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 20%. Etching resistance can be increased when forming the circuit board.
Silicon nitride substrate and silicon nitride circuit board
AOKI KATSUYUKI (Autor:in) / FUKASAWA TAKAYUKI (Autor:in) / MOMMA JUN (Autor:in) / IWAI KENTARO (Autor:in)
29.11.2022
Patent
Elektronische Ressource
Englisch
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