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C12A7 electride thin film fabrication method and C12A7 electride thin film
A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.
C12A7 electride thin film fabrication method and C12A7 electride thin film
A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.
C12A7 electride thin film fabrication method and C12A7 electride thin film
HOSONO HIDEO (Autor:in) / TODA YOSHITAKE (Autor:in) / HAYASHI KATSURO (Autor:in) / ITO SETSURO (Autor:in) / WATANABE SATORU (Autor:in) / MIYAKAWA NAOMICHI (Autor:in) / WATANABE TOSHINARI (Autor:in) / ITO KAZUHIRO (Autor:in)
02.04.2019
Patent
Elektronische Ressource
Englisch
PRODUCTION METHOD FOR C12A7 ELECTRIDE THIN FILM, AND C12A7 ELECTRIDE THIN FILM
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