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BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE
The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.
BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE
The present disclosure relates to a batch sintering method for a high-property silicon nitride ceramic substrate. The batch sintering method includes: (1) silicon nitride ceramic substrate green bodies are stacked and put into a boron nitride crucible, and a layer of boron nitride powder is applied between adjacent silicon nitride ceramic substrate green bodies; (2) after step-by-step vacuumization, debinding is performed in a nitrogen atmosphere or a reducing atmosphere at 500° C. to 900° C.; (3) gas pressure sintering is then performed in a nitrogen atmosphere at 1800° C. to 2000° C., completing the batch preparation of the high-property silicon nitride ceramic substrate.
BATCH SINTERING METHOD FOR HIGH-PROPERTY SILICON NITRIDE CERAMIC SUBSTRATE
ZHANG HUI (author) / LIU XUEJIAN (author) / JIANG JINDI (author) / YAO XIUMIN (author) / HUANG ZHENGREN (author) / CHEN ZHONGMING (author) / HUANG JIAN (author)
2024-02-29
Patent
Electronic Resource
English
IPC:
C04B
Kalk
,
LIME
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