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COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
Disclosed are a composite structure, which is able to enhance low-particle generation so that this can be used as a member for a semiconductor manufacturing device, and a semiconductor manufacturing device provided with the composite structure. The composite structure has a substrate and a structure that is provided on the substrate and has a surface, in which the structure contains Y4Al2O9 as a main component, and an indentation hardness thereof is greater than 6.0 GPa, thereby having excellent low-particle generation, so that this may be suitably used as a member for a semiconductor manufacturing device.
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
Disclosed are a composite structure, which is able to enhance low-particle generation so that this can be used as a member for a semiconductor manufacturing device, and a semiconductor manufacturing device provided with the composite structure. The composite structure has a substrate and a structure that is provided on the substrate and has a surface, in which the structure contains Y4Al2O9 as a main component, and an indentation hardness thereof is greater than 6.0 GPa, thereby having excellent low-particle generation, so that this may be suitably used as a member for a semiconductor manufacturing device.
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
ASHIZAWA HIROAKI (Autor:in) / TAKIZAWA RYOTO (Autor:in)
23.05.2024
Patent
Elektronische Ressource
Englisch
COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE
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