COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE: Fid-Bau Portal

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COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE

ASHIZAWA HIROAKI / TAKIZAWA RYOTO

Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.

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COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE

ASHIZAWA HIROAKI / TAKIZAWA RYOTO

Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.

COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE

ASHIZAWA HIROAKI / TAKIZAWA RYOTO

Disclosed are a member for a semiconductor manufacturing device and a semiconductor manufacturing device that can enhance low-particle generation. The composite structure having a substrate and a structure which is provided on the substrate and has a surface exposed to a plasma environment, in which the structure contains Y4Al2O9 as a main component, and lattice constants and/or intensity ratio of specific X-ray diffraction peak meet specific conditions, has excellent low-particle generation so that this may be suitably used as a member for a semiconductor manufacturing device.

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Titel:

COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING DEVICE PROVIDED WITH THE COMPOSITE STRUCTURE

Beteiligte:

ASHIZAWA HIROAKI (Autor:in) / TAKIZAWA RYOTO (Autor:in)

Erscheinungsdatum:

23.05.2024

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Englisch

Klassifikation:

IPC: H01J Elektrische Entladungsröhren oder Entladungslampen , ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS / C04B Kalk , LIME

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