Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED COMPACT, SPUTTERING TARGET AND OXIDE THIN FILM
An oxide sintered compact according to one embodiment is an oxide sintered compact comprising indium (In), gallium (Ga), zinc (Zn), tin (Sn), aluminum (Al), oxygen (O) and unavoidable impurities, and the atomic ratios of these elements satisfy formulae (1) to (4) below. (1): 0.70 ≤ (In+Zn+Sn)/(In+Ga+Zn+Sn+Al) ≤ 0.98 (2): 0.01 ≤ Ga/(In+Ga+Zn+Sn+Al) ≤ 0.29 (3): 0.01 ≤ Al/(In+Ga+Zn+Sn+Al) ≤ 0.10 (4): 0.50 < In/(In+Ga+Zn+Al) ≤ 0.90
Selon un mode de réalisation, l'invention concerne un comprimé fritté d'oxyde, qui est un comprimé fritté d'oxyde comprenant de l'indium (In), du gallium (Ga), du zinc (Zn), de l'étain (Sn), de l'aluminium (Al), de l'oxygène (O) et des impuretés inévitables, et les rapports atomiques des éléments satisfaisant aux formules (1) à (4) ci-dessous. (1): 0,70 ≤ (In+Zn+Sn)/(In+Ga+Zn+Sn+Al) ≤ 0,98 (2): 0,01 ≤ Ga/(In+Ga+Zn+Sn+Al) ≤ 0,29 (3): 0,01 ≤ Al/(In+Ga+Zn+Sn+Al) ≤ 0,10 (4): 0,50 < In/(In+Ga+Zn+Al) ≤ 0,90
実施形態の一様態に係る酸化物焼結体は、インジウム（Ｉｎ）と、ガリウム（Ｇａ）と、亜鉛（Ｚｎ）と、スズ（Ｓｎ）と、アルミニウム（Ａｌ）と、酸素（Ｏ）と、不可避不純物とからなる酸化物焼結体であって、各元素の原子比が下記式（１）～（４）を満たす。 ０．７０≦（Ｉｎ＋Ｚｎ＋Ｓｎ）／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ｓｎ＋Ａｌ）≦０．９８ ・・（１） ０．０１≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ｓｎ＋Ａｌ）≦０．２９ ・・（２） ０．０１≦Ａｌ／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ｓｎ＋Ａｌ）≦０．１０ ・・（３） ０．５０＜Ｉｎ／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ａｌ）≦０．９０ ・・（４）
OXIDE SINTERED COMPACT, SPUTTERING TARGET AND OXIDE THIN FILM
An oxide sintered compact according to one embodiment is an oxide sintered compact comprising indium (In), gallium (Ga), zinc (Zn), tin (Sn), aluminum (Al), oxygen (O) and unavoidable impurities, and the atomic ratios of these elements satisfy formulae (1) to (4) below. (1): 0.70 ≤ (In+Zn+Sn)/(In+Ga+Zn+Sn+Al) ≤ 0.98 (2): 0.01 ≤ Ga/(In+Ga+Zn+Sn+Al) ≤ 0.29 (3): 0.01 ≤ Al/(In+Ga+Zn+Sn+Al) ≤ 0.10 (4): 0.50 < In/(In+Ga+Zn+Al) ≤ 0.90
Selon un mode de réalisation, l'invention concerne un comprimé fritté d'oxyde, qui est un comprimé fritté d'oxyde comprenant de l'indium (In), du gallium (Ga), du zinc (Zn), de l'étain (Sn), de l'aluminium (Al), de l'oxygène (O) et des impuretés inévitables, et les rapports atomiques des éléments satisfaisant aux formules (1) à (4) ci-dessous. (1): 0,70 ≤ (In+Zn+Sn)/(In+Ga+Zn+Sn+Al) ≤ 0,98 (2): 0,01 ≤ Ga/(In+Ga+Zn+Sn+Al) ≤ 0,29 (3): 0,01 ≤ Al/(In+Ga+Zn+Sn+Al) ≤ 0,10 (4): 0,50 < In/(In+Ga+Zn+Al) ≤ 0,90
実施形態の一様態に係る酸化物焼結体は、インジウム（Ｉｎ）と、ガリウム（Ｇａ）と、亜鉛（Ｚｎ）と、スズ（Ｓｎ）と、アルミニウム（Ａｌ）と、酸素（Ｏ）と、不可避不純物とからなる酸化物焼結体であって、各元素の原子比が下記式（１）～（４）を満たす。 ０．７０≦（Ｉｎ＋Ｚｎ＋Ｓｎ）／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ｓｎ＋Ａｌ）≦０．９８ ・・（１） ０．０１≦Ｇａ／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ｓｎ＋Ａｌ）≦０．２９ ・・（２） ０．０１≦Ａｌ／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ｓｎ＋Ａｌ）≦０．１０ ・・（３） ０．５０＜Ｉｎ／（Ｉｎ＋Ｇａ＋Ｚｎ＋Ａｌ）≦０．９０ ・・（４）
OXIDE SINTERED COMPACT, SPUTTERING TARGET AND OXIDE THIN FILM
COMPRIMÉ FRITTÉ D'OXYDE, CIBLE DE PULVÉRISATION ET FILM MINCE D'OXYDE
酸化物焼結体、スパッタリングターゲットおよび酸化物薄膜
TERAMURA KYOSUKE (Autor:in)
04.07.2019
Patent
Elektronische Ressource
Japanisch
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