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SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SEMICONDUCTOR FILM

INOUE KAZUYOSHI

Provided is a semiconductor film comprising a solid-phase crystallized product of an indium oxide doped with tin and hydrogen.

L'invention concerne un film semi-conducteur comprenant un produit cristallisé en phase solide d'un oxyde d'indium dopé à l'étain et à l'hydrogène.

スズ及び水素ドープ酸化インジウムの固相結晶化物を含む、半導体膜。

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SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SEMICONDUCTOR FILM

INOUE KAZUYOSHI

Abstract

Provided is a semiconductor film comprising a solid-phase crystallized product of an indium oxide doped with tin and hydrogen.

L'invention concerne un film semi-conducteur comprenant un produit cristallisé en phase solide d'un oxyde d'indium dopé à l'étain et à l'hydrogène.

スズ及び水素ドープ酸化インジウムの固相結晶化物を含む、半導体膜。

SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SEMICONDUCTOR FILM

INOUE KAZUYOSHI

Abstract

Provided is a semiconductor film comprising a solid-phase crystallized product of an indium oxide doped with tin and hydrogen.

L'invention concerne un film semi-conducteur comprenant un produit cristallisé en phase solide d'un oxyde d'indium dopé à l'étain et à l'hydrogène.

スズ及び水素ドープ酸化インジウムの固相結晶化物を含む、半導体膜。

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Titel:

SEMICONDUCTOR FILM AND METHOD FOR PRODUCING SEMICONDUCTOR FILM

Weitere Titelangaben:

FILM SEMI-CONDUCTEUR ET PROCÉDÉ DE PRODUCTION DE FILM SEMI-CONDUCTEUR
半導体膜、及び半導体膜の製造方法

Beteiligte:

INOUE KAZUYOSHI (Autor:in)

Erscheinungsdatum:

05.10.2023

Medientyp:

Patent

Format:

Elektronische Ressource

Sprache:

Japanisch

Klassifikation:

IPC: H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL

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