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Reactive Ion Etching of Silicon Containing Resists

Hartney, M. A. / Hess, D. W. / Soane, D. S.

Abstract Advanced multi-layer lithography techniques are currently being developed to meet future processing requirements.1 Both bi-layer processes,2 and the more recent gas-phase functionalized single layer processes3 aim to enhance etch resistance by building silicon into the resist polymer or by adding it selectively after exposure. The materials may then be etched in an oxygen plasma, which converts the silicon to an oxidized species4 and allows pattern transfer into the underlying hydrocarbon materials. Regardless of the method used to incorporate silicon into a resist, the ultimate resolution of this process is a function of the plasma etching process as well as the lithographic performance. Since the planarizing layer may often be 5 to 10 times thicker than the silicon containing resist (or region), etch anisotropy is a primary concern, and low pressure RIE plasmas are used.

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Reactive Ion Etching of Silicon Containing Resists

Hartney, M. A. / Hess, D. W. / Soane, D. S.

Abstract Advanced multi-layer lithography techniques are currently being developed to meet future processing requirements.1 Both bi-layer processes,2 and the more recent gas-phase functionalized single layer processes3 aim to enhance etch resistance by building silicon into the resist polymer or by adding it selectively after exposure. The materials may then be etched in an oxygen plasma, which converts the silicon to an oxidized species4 and allows pattern transfer into the underlying hydrocarbon materials. Regardless of the method used to incorporate silicon into a resist, the ultimate resolution of this process is a function of the plasma etching process as well as the lithographic performance. Since the planarizing layer may often be 5 to 10 times thicker than the silicon containing resist (or region), etch anisotropy is a primary concern, and low pressure RIE plasmas are used.

Reactive Ion Etching of Silicon Containing Resists

Hartney, M. A. / Hess, D. W. / Soane, D. S.

Abstract Advanced multi-layer lithography techniques are currently being developed to meet future processing requirements.1 Both bi-layer processes,2 and the more recent gas-phase functionalized single layer processes3 aim to enhance etch resistance by building silicon into the resist polymer or by adding it selectively after exposure. The materials may then be etched in an oxygen plasma, which converts the silicon to an oxidized species4 and allows pattern transfer into the underlying hydrocarbon materials. Regardless of the method used to incorporate silicon into a resist, the ultimate resolution of this process is a function of the plasma etching process as well as the lithographic performance. Since the planarizing layer may often be 5 to 10 times thicker than the silicon containing resist (or region), etch anisotropy is a primary concern, and low pressure RIE plasmas are used.

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Titel:

Reactive Ion Etching of Silicon Containing Resists

Beteiligte:

Hartney, M. A. (Autor:in) / Hess, D. W. (Autor:in) / Soane, D. S. (Autor:in)

Erschienen in:

Plasma-Surface Interactions and Processing of Materials ; 503-505

NATO ASI Series ; 176

Erscheinungsdatum:

01.01.1990

Format / Umfang:

3 pages

ISBN:

978-94-009-1946-4 , 978-94-010-7369-1

ISSN:

DOI:

https://doi.org/10.1007/978-94-009-1946-4_33

Medientyp:

Aufsatz/Kapitel (Buch)

Format:

Elektronische Ressource

Sprache:

Englisch

Schlagwörter:

Etch Rate , Plasma Potential , Etch Anisotropy , Plasma Etching Process , Etch Rate Increase Chemistry , Industrial Chemistry/Chemical Engineering , Characterization and Evaluation of Materials , Nuclear Physics, Heavy Ions, Hadrons , Physical Chemistry

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